Long wavelength metal-semiconductor-metal photodetectors with Ti/Au and indium-tin-oxide electrodes

I. Adesida, J. W. Seo, W. Wohlmuth, C. Caneau, R. Bhat

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

In summary, the application of high transparency ITO to long-wavelength InAlAs/InGaAs MSMs have been discussed. The transparency of ITO has been shown to be as high as 99% at a wavelength of 1.3 μm when hydrogen is included in the Ar sputter gas mixture. This high transparency is in comparison with the 70% obtained without the inclusion of hydrogen. The transparency of 99% reported here for ITO at a wavelength of 1.3 μm is the highest that has been reported so far. The high transparency has resulted in MSM devices with a responsivity of 0.79 A/W which is double the responsivity of 0.39 A/W obtained for corresponding Ti/Au-MSMs. The high speed response of the high transparency ITO-MSMs was measured to be 6 GHz which is lower than the 13 GHz obtained for corresponding Ti/Au-MSMs. This is due to the higher resistivity of the high transparency ITO and the fact that carriers created under the ITO electrodes need a longer transit time before being collected.

Original languageEnglish
Pages (from-to)284-287
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA
Duration: Mar 27 1994Mar 31 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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