Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes

Walter A. Wohlmuth, Ilesanmi Adesida, Catherine Caneau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this paper, we present a comparative study of transparent and opaque electrode InAlAs/InGaAs metal-semiconductor-metal photodiodes (MSMPDs) for operation at 1.31 and 1.55 μm. The transparent materials are indium-tin-oxide (ITO) and cadmium-tin-oxide (CTO) and the opaque material is Ti-Au. The rf magnetron sputtered films of ITO and CTO, deposited at a substrate temperature of 300 degrees C, exhibited as-deposited resistivities of 5.6·10 -3 ω·cm and 1.0·10 -3 ω·cm, respectively. The resistivity of the ITO and CTO films dropped to 1.1·10 -3 ω·cm and 5.2·10 -4 ω·cm, respectively, after a 4 minute 400 degree C anneal in an N 2 ambient. The interdigitated ITO and CTO electrodes were made by etching in a methane:hydrogen (1 to 3) plasma. The responsivity of 1 μm finger by 1 μm spacing (1 by 1 μm), 50 × 50 μm 2 active area, MSMPDs was 0.40 A/W for the Ti-Au, 0.66 A/W for the CTO, and 0.69 A/W for the ITO MSMPDs. The Ti-Au, CTO and ITO MSMPDs had 3- dB cut-off frequencies of 14.0 GHz, 7.5 GHz, and 5.0 GHz, respectively, from time-domain measurements performed at 1.3 μm and 11.26 GHz, 4.00 GHz, and 2.61 GHz, respectively, from frequency-domain measurements performed at 1.55 μm. Discrepencies between the 3-dB cut-off frequency obtained from the time-domain and the frequency-domain measurements are attributed to the time-domain measurement system's inability to accurately resolve low frequency behavior (below 2 GHz) and space charge effects.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages256-265
Number of pages10
Volume2550
Publication statusPublished - 1995
Externally publishedYes
EventPhotodetectors and Power Meters II - San Diego, CA, USA
Duration: Jul 11 1995Jul 12 1995

Other

OtherPhotodetectors and Power Meters II
CitySan Diego, CA, USA
Period7/11/957/12/95

Fingerprint

Photodetectors
Tin oxides
tin oxides
photometers
Semiconductor materials
Wavelength
Electrodes
electrodes
Metals
wavelengths
Cadmium
indium oxides
metals
Indium
cadmium
Photodiodes
photodiodes
Cutoff frequency
cut-off
transparence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Wohlmuth, W. A., Adesida, I., & Caneau, C. (1995). Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2550, pp. 256-265)

Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes. / Wohlmuth, Walter A.; Adesida, Ilesanmi; Caneau, Catherine.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2550 1995. p. 256-265.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wohlmuth, WA, Adesida, I & Caneau, C 1995, Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2550, pp. 256-265, Photodetectors and Power Meters II, San Diego, CA, USA, 7/11/95.
Wohlmuth WA, Adesida I, Caneau C. Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2550. 1995. p. 256-265
Wohlmuth, Walter A. ; Adesida, Ilesanmi ; Caneau, Catherine. / Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2550 1995. pp. 256-265
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N2 - In this paper, we present a comparative study of transparent and opaque electrode InAlAs/InGaAs metal-semiconductor-metal photodiodes (MSMPDs) for operation at 1.31 and 1.55 μm. The transparent materials are indium-tin-oxide (ITO) and cadmium-tin-oxide (CTO) and the opaque material is Ti-Au. The rf magnetron sputtered films of ITO and CTO, deposited at a substrate temperature of 300 degrees C, exhibited as-deposited resistivities of 5.6·10 -3 ω·cm and 1.0·10 -3 ω·cm, respectively. The resistivity of the ITO and CTO films dropped to 1.1·10 -3 ω·cm and 5.2·10 -4 ω·cm, respectively, after a 4 minute 400 degree C anneal in an N 2 ambient. The interdigitated ITO and CTO electrodes were made by etching in a methane:hydrogen (1 to 3) plasma. The responsivity of 1 μm finger by 1 μm spacing (1 by 1 μm), 50 × 50 μm 2 active area, MSMPDs was 0.40 A/W for the Ti-Au, 0.66 A/W for the CTO, and 0.69 A/W for the ITO MSMPDs. The Ti-Au, CTO and ITO MSMPDs had 3- dB cut-off frequencies of 14.0 GHz, 7.5 GHz, and 5.0 GHz, respectively, from time-domain measurements performed at 1.3 μm and 11.26 GHz, 4.00 GHz, and 2.61 GHz, respectively, from frequency-domain measurements performed at 1.55 μm. Discrepencies between the 3-dB cut-off frequency obtained from the time-domain and the frequency-domain measurements are attributed to the time-domain measurement system's inability to accurately resolve low frequency behavior (below 2 GHz) and space charge effects.

AB - In this paper, we present a comparative study of transparent and opaque electrode InAlAs/InGaAs metal-semiconductor-metal photodiodes (MSMPDs) for operation at 1.31 and 1.55 μm. The transparent materials are indium-tin-oxide (ITO) and cadmium-tin-oxide (CTO) and the opaque material is Ti-Au. The rf magnetron sputtered films of ITO and CTO, deposited at a substrate temperature of 300 degrees C, exhibited as-deposited resistivities of 5.6·10 -3 ω·cm and 1.0·10 -3 ω·cm, respectively. The resistivity of the ITO and CTO films dropped to 1.1·10 -3 ω·cm and 5.2·10 -4 ω·cm, respectively, after a 4 minute 400 degree C anneal in an N 2 ambient. The interdigitated ITO and CTO electrodes were made by etching in a methane:hydrogen (1 to 3) plasma. The responsivity of 1 μm finger by 1 μm spacing (1 by 1 μm), 50 × 50 μm 2 active area, MSMPDs was 0.40 A/W for the Ti-Au, 0.66 A/W for the CTO, and 0.69 A/W for the ITO MSMPDs. The Ti-Au, CTO and ITO MSMPDs had 3- dB cut-off frequencies of 14.0 GHz, 7.5 GHz, and 5.0 GHz, respectively, from time-domain measurements performed at 1.3 μm and 11.26 GHz, 4.00 GHz, and 2.61 GHz, respectively, from frequency-domain measurements performed at 1.55 μm. Discrepencies between the 3-dB cut-off frequency obtained from the time-domain and the frequency-domain measurements are attributed to the time-domain measurement system's inability to accurately resolve low frequency behavior (below 2 GHz) and space charge effects.

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