Abstract
In this paper, we present a comparative study of transparent and opaque electrode InAlAs/InGaAs metal-semiconductor-metal photodiodes (MSMPDs) for operation at 1.31 and 1.55 μm. The transparent materials are indium-tin-oxide (ITO) and cadmium-tin-oxide (CTO) and the opaque material is Ti-Au. The rf magnetron sputtered films of ITO and CTO, deposited at a substrate temperature of 300 degrees C, exhibited as-deposited resistivities of 5.6·10 -3 ω·cm and 1.0·10 -3 ω·cm, respectively. The resistivity of the ITO and CTO films dropped to 1.1·10 -3 ω·cm and 5.2·10 -4 ω·cm, respectively, after a 4 minute 400 degree C anneal in an N 2 ambient. The interdigitated ITO and CTO electrodes were made by etching in a methane:hydrogen (1 to 3) plasma. The responsivity of 1 μm finger by 1 μm spacing (1 by 1 μm), 50 × 50 μm 2 active area, MSMPDs was 0.40 A/W for the Ti-Au, 0.66 A/W for the CTO, and 0.69 A/W for the ITO MSMPDs. The Ti-Au, CTO and ITO MSMPDs had 3- dB cut-off frequencies of 14.0 GHz, 7.5 GHz, and 5.0 GHz, respectively, from time-domain measurements performed at 1.3 μm and 11.26 GHz, 4.00 GHz, and 2.61 GHz, respectively, from frequency-domain measurements performed at 1.55 μm. Discrepencies between the 3-dB cut-off frequency obtained from the time-domain and the frequency-domain measurements are attributed to the time-domain measurement system's inability to accurately resolve low frequency behavior (below 2 GHz) and space charge effects.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Pages | 256-265 |
| Number of pages | 10 |
| Volume | 2550 |
| Publication status | Published - 1995 |
| Externally published | Yes |
| Event | Photodetectors and Power Meters II - San Diego, CA, USA Duration: Jul 11 1995 → Jul 12 1995 |
Other
| Other | Photodetectors and Power Meters II |
|---|---|
| City | San Diego, CA, USA |
| Period | 7/11/95 → 7/12/95 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes. / Wohlmuth, Walter A.; Adesida, Ilesanmi; Caneau, Catherine.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2550 1995. p. 256-265.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes
AU - Wohlmuth, Walter A.
AU - Adesida, Ilesanmi
AU - Caneau, Catherine
PY - 1995
Y1 - 1995
N2 - In this paper, we present a comparative study of transparent and opaque electrode InAlAs/InGaAs metal-semiconductor-metal photodiodes (MSMPDs) for operation at 1.31 and 1.55 μm. The transparent materials are indium-tin-oxide (ITO) and cadmium-tin-oxide (CTO) and the opaque material is Ti-Au. The rf magnetron sputtered films of ITO and CTO, deposited at a substrate temperature of 300 degrees C, exhibited as-deposited resistivities of 5.6·10 -3 ω·cm and 1.0·10 -3 ω·cm, respectively. The resistivity of the ITO and CTO films dropped to 1.1·10 -3 ω·cm and 5.2·10 -4 ω·cm, respectively, after a 4 minute 400 degree C anneal in an N 2 ambient. The interdigitated ITO and CTO electrodes were made by etching in a methane:hydrogen (1 to 3) plasma. The responsivity of 1 μm finger by 1 μm spacing (1 by 1 μm), 50 × 50 μm 2 active area, MSMPDs was 0.40 A/W for the Ti-Au, 0.66 A/W for the CTO, and 0.69 A/W for the ITO MSMPDs. The Ti-Au, CTO and ITO MSMPDs had 3- dB cut-off frequencies of 14.0 GHz, 7.5 GHz, and 5.0 GHz, respectively, from time-domain measurements performed at 1.3 μm and 11.26 GHz, 4.00 GHz, and 2.61 GHz, respectively, from frequency-domain measurements performed at 1.55 μm. Discrepencies between the 3-dB cut-off frequency obtained from the time-domain and the frequency-domain measurements are attributed to the time-domain measurement system's inability to accurately resolve low frequency behavior (below 2 GHz) and space charge effects.
AB - In this paper, we present a comparative study of transparent and opaque electrode InAlAs/InGaAs metal-semiconductor-metal photodiodes (MSMPDs) for operation at 1.31 and 1.55 μm. The transparent materials are indium-tin-oxide (ITO) and cadmium-tin-oxide (CTO) and the opaque material is Ti-Au. The rf magnetron sputtered films of ITO and CTO, deposited at a substrate temperature of 300 degrees C, exhibited as-deposited resistivities of 5.6·10 -3 ω·cm and 1.0·10 -3 ω·cm, respectively. The resistivity of the ITO and CTO films dropped to 1.1·10 -3 ω·cm and 5.2·10 -4 ω·cm, respectively, after a 4 minute 400 degree C anneal in an N 2 ambient. The interdigitated ITO and CTO electrodes were made by etching in a methane:hydrogen (1 to 3) plasma. The responsivity of 1 μm finger by 1 μm spacing (1 by 1 μm), 50 × 50 μm 2 active area, MSMPDs was 0.40 A/W for the Ti-Au, 0.66 A/W for the CTO, and 0.69 A/W for the ITO MSMPDs. The Ti-Au, CTO and ITO MSMPDs had 3- dB cut-off frequencies of 14.0 GHz, 7.5 GHz, and 5.0 GHz, respectively, from time-domain measurements performed at 1.3 μm and 11.26 GHz, 4.00 GHz, and 2.61 GHz, respectively, from frequency-domain measurements performed at 1.55 μm. Discrepencies between the 3-dB cut-off frequency obtained from the time-domain and the frequency-domain measurements are attributed to the time-domain measurement system's inability to accurately resolve low frequency behavior (below 2 GHz) and space charge effects.
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M3 - Conference contribution
SN - 0819419095
SN - 9780819419095
VL - 2550
SP - 256
EP - 265
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -