Long wavelength metamorphic double heterojunction in0.53Ga0.47As/inalgaas/ in0.52Al0.48As photodiodes on gaAs substrates

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, P. Fay, I. Adesida

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5 Citations (Scopus)

Abstract

The design and performance of metamorphic InGaAs/InGaAlAls/ InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55μm light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer.

Original languageEnglish
Pages (from-to)707-708
Number of pages2
JournalElectronics Letters
Volume37
Issue number11
DOIs
Publication statusPublished - May 24 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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