Long-wavelength metamorphic InGaAs detectors on GaAs substrates

I. Adesida, J. H. Jang, J. W. Bae, S. Kim, W. E. Hoke

Research output: Contribution to journalArticle

Abstract

The properties of metamorphic materials, fabrication process of photodiodes, and device results on long-wavelength InGaAs photodetectors with low leakage current and large bandwidth are presented. The metamorphic device layers are grown on GaAs substrates using a linearly-graded buffer layer to expand the lattice constant. The indium content in the layer is gradually increased and that of galllium is gradually decreased form the GaAs substrate to In0.52Al0.48As which is lattice-matched to InP.

Original languageEnglish
Pages (from-to)919-920
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 2003
Externally publishedYes

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Detectors
Wavelength
Indium
Substrates
Buffer layers
Photodetectors
Photodiodes
Leakage currents
Lattice constants
Bandwidth
Fabrication
gallium arsenide

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Long-wavelength metamorphic InGaAs detectors on GaAs substrates. / Adesida, I.; Jang, J. H.; Bae, J. W.; Kim, S.; Hoke, W. E.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, 2003, p. 919-920.

Research output: Contribution to journalArticle

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