Loss in Heterostructure Waveguide Bends Formed on a Patterned Substrate

T. K. Tang, L. M. Miller, T. Cockerill, P. D. Swanson, R. Bryan, T. A. Detemple, I. Adesida, J. J. Coleman

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Abstract

An experimental comparison is made of the loss of Al- rGa1-rAs heterostructure waveguide routing geometries at ≈860 nm patterned by two methods: Zn impurity induced layer disordering and native growth on a patterned substrate. Two multimode geometries were investigated: a raised cosine s-bend and a modified abrupt bend due to Shiina et al. [8, p. 736]. The measured transition distance for 3 dB loss was approximately 300 μm for 100 μm offset guides in the s-bend geometry for the patterned substrate samples using wet and dry etching methods. For the Shiina bend, the measured angle corresponding to the 3 dB loss was ≈13° also for both etching methods. These results represent significant improvements over the equivalent structures fabricated by impurity induced layer disordering primarily because of reduced free-carrier loss.

Original languageEnglish
Pages (from-to)120-122
Number of pages3
JournalIEEE Photonics Technology Letters
Volume1
Issue number6
DOIs
Publication statusPublished - Jun 1989

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Tang, T. K., Miller, L. M., Cockerill, T., Swanson, P. D., Bryan, R., Detemple, T. A., Adesida, I., & Coleman, J. J. (1989). Loss in Heterostructure Waveguide Bends Formed on a Patterned Substrate. IEEE Photonics Technology Letters, 1(6), 120-122. https://doi.org/10.1109/68.36008