Low 1/f noise in AlGaN/GaN HFETs on SiC substrates

S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, A. Khan, J. W. Yang, G. Simin, A. Ping, T. Adesida

Research output: Contribution to journalConference articlepeer-review

24 Citations (Scopus)


Experimental results of the low-frequency noise measurements on a large number of different AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on sapphire and SiC substrates have been presented. In the HEMTs grown on sapphire, the 1/f noise is an order of magnitude (or more) higher than for AlGaN/GaN HEMTs grown on SiC substrates. The devices on SiC substrates also have higher electron mobility compared to the devices grown on sapphire substrates. The temperature dependence of noise reveals a contribution to the noise from a local level with activation energy of approximately 0.42 eV for the structures grown on sapphire. A very weak temperature dependence of the low-frequency 1/f noise found for the wafers grown on SiC is very important for high temperature applications of these devices.

Original languageEnglish
Pages (from-to)201-204
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Issue number1
Publication statusPublished - Nov 1 1999
Externally publishedYes
EventProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
Duration: Jul 4 1999Jul 9 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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