Low dark current InAlAs/InGaAs metal-semiconductor-metal photodetectors

W. A. Wohlmuth, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journalConference articlepeer-review

Abstract

Significant reduction in dark current has been demonstrated at logic level bias voltages in metal-semiconductor-metal photodetectors (MSMPD) by modifying the electric field distribution underneath the electrodes and reducing parasitic leakage current. A reduction in dark current by a factor of 10 and a suppression of breakdown effects was obtained between the conventional MSMPDs and the MSMPDs with the contact pads and electrode tips on silicon nitride. There was no measurable difference in either the responsivity of the bandwidth of these two devices.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Jan 1 1996
Externally publishedYes
EventProceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger
Duration: Apr 21 1996Apr 25 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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