Low dark current InAlAs/InGaAs metal-semiconductor-metal photodetectors

W. A. Wohlmuth, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journalArticle

Abstract

Significant reduction in dark current has been demonstrated at logic level bias voltages in metal-semiconductor-metal photodetectors (MSMPD) by modifying the electric field distribution underneath the electrodes and reducing parasitic leakage current. A reduction in dark current by a factor of 10 and a suppression of breakdown effects was obtained between the conventional MSMPDs and the MSMPDs with the contact pads and electrode tips on silicon nitride. There was no measurable difference in either the responsivity of the bandwidth of these two devices.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

Dark currents
Photodetectors
dark current
photometers
Metals
Semiconductor materials
Electrodes
electrodes
Bias voltage
Silicon nitride
silicon nitrides
Leakage currents
metals
logic
leakage
breakdown
Electric fields
retarding
bandwidth
Bandwidth

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Significant reduction in dark current has been demonstrated at logic level bias voltages in metal-semiconductor-metal photodetectors (MSMPD) by modifying the electric field distribution underneath the electrodes and reducing parasitic leakage current. A reduction in dark current by a factor of 10 and a suppression of breakdown effects was obtained between the conventional MSMPDs and the MSMPDs with the contact pads and electrode tips on silicon nitride. There was no measurable difference in either the responsivity of the bandwidth of these two devices.",
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AU - Fay, P.

AU - Caneau, C.

AU - Adesida, I.

PY - 1996

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AB - Significant reduction in dark current has been demonstrated at logic level bias voltages in metal-semiconductor-metal photodetectors (MSMPD) by modifying the electric field distribution underneath the electrodes and reducing parasitic leakage current. A reduction in dark current by a factor of 10 and a suppression of breakdown effects was obtained between the conventional MSMPDs and the MSMPDs with the contact pads and electrode tips on silicon nitride. There was no measurable difference in either the responsivity of the bandwidth of these two devices.

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