Low dark current, long wavelength metal-semiconductor-metal photodetectors

W. A. Wohlmuth, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Dark current densities of 0.13 and 0.44pA/μm2 at biases of 5 and 10V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date.

Original languageEnglish
Pages (from-to)249-250
Number of pages2
JournalElectronics Letters
Volume32
Issue number3
Publication statusPublished - Feb 1 1996
Externally publishedYes

Fingerprint

Dark currents
Photodetectors
Semiconductor materials
Wavelength
Metals
Current density
Electrodes
Silicon nitride

Keywords

  • Metal-semiconductor-metal structures
  • Photodetectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Low dark current, long wavelength metal-semiconductor-metal photodetectors. / Wohlmuth, W. A.; Fay, P.; Caneau, C.; Adesida, I.

In: Electronics Letters, Vol. 32, No. 3, 01.02.1996, p. 249-250.

Research output: Contribution to journalArticle

Wohlmuth, WA, Fay, P, Caneau, C & Adesida, I 1996, 'Low dark current, long wavelength metal-semiconductor-metal photodetectors', Electronics Letters, vol. 32, no. 3, pp. 249-250.
Wohlmuth, W. A. ; Fay, P. ; Caneau, C. ; Adesida, I. / Low dark current, long wavelength metal-semiconductor-metal photodetectors. In: Electronics Letters. 1996 ; Vol. 32, No. 3. pp. 249-250.
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