Low dark current, long wavelength metal-semiconductor-metal photodetectors

W. A. Wohlmuth; P. Fay; C. Caneau; I. Adesida

doi:10.1049/el:19960178

Low dark current, long wavelength metal-semiconductor-metal photodetectors

W. A. Wohlmuth, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Dark current densities of 0.13 and 0.44pA/μm² at biases of 5 and 10V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date.

Original language	English
Pages (from-to)	249-250
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1049/el:19960178
Publication status	Published - Feb 1 1996
Externally published	Yes

Keywords

Metal-semiconductor-metal structures
Photodetectors

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19960178

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abstract = "Dark current densities of 0.13 and 0.44pA/μm2 at biases of 5 and 10V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date.",

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author = "Wohlmuth, {W. A.} and P. Fay and C. Caneau and I. Adesida",

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T1 - Low dark current, long wavelength metal-semiconductor-metal photodetectors

AU - Wohlmuth, W. A.

AU - Fay, P.

AU - Caneau, C.

AU - Adesida, I.

PY - 1996/2/1

Y1 - 1996/2/1

N2 - Dark current densities of 0.13 and 0.44pA/μm2 at biases of 5 and 10V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date.

AB - Dark current densities of 0.13 and 0.44pA/μm2 at biases of 5 and 10V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date.

KW - Metal-semiconductor-metal structures

KW - Photodetectors

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JF - Electronics Letters

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ER -

Low dark current, long wavelength metal-semiconductor-metal photodetectors

Abstract

Keywords

ASJC Scopus subject areas

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