Abstract
Dark current densities of 0.13 and 0.44pA/μm2 at biases of 5 and 10V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date.
| Original language | English |
|---|---|
| Pages (from-to) | 249-250 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 32 |
| Issue number | 3 |
| Publication status | Published - Feb 1 1996 |
| Externally published | Yes |
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Keywords
- Metal-semiconductor-metal structures
- Photodetectors
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Low dark current, long wavelength metal-semiconductor-metal photodetectors. / Wohlmuth, W. A.; Fay, P.; Caneau, C.; Adesida, I.
In: Electronics Letters, Vol. 32, No. 3, 01.02.1996, p. 249-250.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low dark current, long wavelength metal-semiconductor-metal photodetectors
AU - Wohlmuth, W. A.
AU - Fay, P.
AU - Caneau, C.
AU - Adesida, I.
PY - 1996/2/1
Y1 - 1996/2/1
N2 - Dark current densities of 0.13 and 0.44pA/μm2 at biases of 5 and 10V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date.
AB - Dark current densities of 0.13 and 0.44pA/μm2 at biases of 5 and 10V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date.
KW - Metal-semiconductor-metal structures
KW - Photodetectors
UR - http://www.scopus.com/inward/record.url?scp=0030081942&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030081942&partnerID=8YFLogxK
M3 - Article
VL - 32
SP - 249
EP - 250
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 3
ER -