Low-frequency noise characterization in AlGaN/GaN HEMTs with varying gate recess depths

Shrawan K. Jha, Bun H. Leung, Charles C. Surya, Heins Schweizer, Manfred H. Pilkhuhn

Research output: Contribution to journalConference article

Abstract

Low-frequency noise measurements were performed on a number of AlGaN/GaN HEMTs with different gate recess depths, which were formed by dry etching. Detailed characterizations of the low-frequency noise properties were performed on the devices as a function of as a function of hot-electron stressing conducted at VD = 10 V and VG = -1.5 V. The room temperature voltage noise power spectral density, SV(f), of the devices were found to show 1/f dependence. A comparison of SV(f) measured from different devices clearly indicate increase in the noise levels for the devices with large recess depths, reflecting the degradation caused by ion-impact induced damage during recess formation. Furthermore, the results of low-frequency noise measurements showed fast degradations for the devices with larger gate recess depths. Our experimental data clearly show that the dry etching process has induced damages in gates.

Original languageEnglish
Article numberE8.31
Pages (from-to)465-470
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume831
Publication statusPublished - Aug 25 2005
Externally publishedYes
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 3 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Low-frequency noise characterization in AlGaN/GaN HEMTs with varying gate recess depths'. Together they form a unique fingerprint.

  • Cite this

    Jha, S. K., Leung, B. H., Surya, C. C., Schweizer, H., & Pilkhuhn, M. H. (2005). Low-frequency noise characterization in AlGaN/GaN HEMTs with varying gate recess depths. Materials Research Society Symposium Proceedings, 831, 465-470. [E8.31].