Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs

S. Jha, J. Gao, C. F. Zhu, E. Jelenkovic, K. Y. Tong, M. Pilkuhn, C. Surya, H. Schweizer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Hot-electron degradation in MOCVD-grown GaN-based HEMTs, with different gate recess depths, was monitored by flicker noise measurement. Drastic changes were observed in the flicker noise power spectral density, SV(f) and I-V characteristics when the devices were subjected to voltage stress at V D=10V for a short stress time of tS=1 minute. The degradations can be partially reverted by annealing the devices at 100°C for 20 minutes. Further stressing of the devices were performed with V G=-1.5V and VD=10V, which results in irreversible degradation in the SV(f). Detailed analyses of the data suggest that the stressing of the devices, with short tS, results in the generation of H+ at the AlGaN/GaN interface leading to the observed increase in ID, and SV(f). This can be easily annealed as the H+ has relatively low formation energy. The experimental results suggest that the H+ accumulated at the AlGaN/GaN interface may result in a network of percolation paths formed by the depression of the surface potential at the heterointerface. Motion of the H+, arising from the application of a large VD, leads to the modulation of the percolation paths of the carriers in the 2DEG resulting in large random fluctuations in SV(f). Further stressing of the devices exhibit substantial increase in SV(f) due to the generation of traps at the AlGaN/GaN interface. The experimental results demonstrate the significant impact of gate recess depths on the lifetimes of the devices.

Original languageEnglish
Title of host publicationNOISE AND FLUCTUATIONS
Subtitle of host publication18th International Conference on Noise and Fluctuations - ICNF 2005
Pages295-298
Number of pages4
Volume780
DOIs
Publication statusPublished - Aug 25 2005
Externally publishedYes
EventNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 - Salamanca, Spain
Duration: Sep 19 2005Sep 23 2005

Conference

ConferenceNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005
CountrySpain
CitySalamanca
Period9/19/059/23/05

Fingerprint

high electron mobility transistors
hot electrons
degradation
low frequencies
recesses
flicker
energy of formation
noise measurement
metalorganic chemical vapor deposition
traps
modulation
life (durability)
annealing
electric potential

Keywords

  • Flicker noise
  • GaN HEMTs
  • Hot-electron stressing

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Jha, S., Gao, J., Zhu, C. F., Jelenkovic, E., Tong, K. Y., Pilkuhn, M., ... Schweizer, H. (2005). Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs. In NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 (Vol. 780, pp. 295-298) https://doi.org/10.1063/1.2036753

Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs. / Jha, S.; Gao, J.; Zhu, C. F.; Jelenkovic, E.; Tong, K. Y.; Pilkuhn, M.; Surya, C.; Schweizer, H.

NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. Vol. 780 2005. p. 295-298.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jha, S, Gao, J, Zhu, CF, Jelenkovic, E, Tong, KY, Pilkuhn, M, Surya, C & Schweizer, H 2005, Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs. in NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. vol. 780, pp. 295-298, NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005, Salamanca, Spain, 9/19/05. https://doi.org/10.1063/1.2036753
Jha S, Gao J, Zhu CF, Jelenkovic E, Tong KY, Pilkuhn M et al. Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs. In NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. Vol. 780. 2005. p. 295-298 https://doi.org/10.1063/1.2036753
Jha, S. ; Gao, J. ; Zhu, C. F. ; Jelenkovic, E. ; Tong, K. Y. ; Pilkuhn, M. ; Surya, C. ; Schweizer, H. / Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs. NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. Vol. 780 2005. pp. 295-298
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AB - Hot-electron degradation in MOCVD-grown GaN-based HEMTs, with different gate recess depths, was monitored by flicker noise measurement. Drastic changes were observed in the flicker noise power spectral density, SV(f) and I-V characteristics when the devices were subjected to voltage stress at V D=10V for a short stress time of tS=1 minute. The degradations can be partially reverted by annealing the devices at 100°C for 20 minutes. Further stressing of the devices were performed with V G=-1.5V and VD=10V, which results in irreversible degradation in the SV(f). Detailed analyses of the data suggest that the stressing of the devices, with short tS, results in the generation of H+ at the AlGaN/GaN interface leading to the observed increase in ID, and SV(f). This can be easily annealed as the H+ has relatively low formation energy. The experimental results suggest that the H+ accumulated at the AlGaN/GaN interface may result in a network of percolation paths formed by the depression of the surface potential at the heterointerface. Motion of the H+, arising from the application of a large VD, leads to the modulation of the percolation paths of the carriers in the 2DEG resulting in large random fluctuations in SV(f). Further stressing of the devices exhibit substantial increase in SV(f) due to the generation of traps at the AlGaN/GaN interface. The experimental results demonstrate the significant impact of gate recess depths on the lifetimes of the devices.

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