We investigated the effects of the material growth parameters on the properties of 1/f noise in GaN-based LEDs under high current stress. Two sets of growth parameters were used in which the fluxes for trimethyl indium (TMl) and triethyl gallium (TEG) have been varied. TEM results show that type A devices (TMI/[TMI+TEG] = 64.7%) produces much sharper GaN/InGaN interfaces than type B devices (TMI/[TMI+TEG] = 79.9%). Detailed characterizations of the optoelectronic and lowfrequency noise properties of the devices were conducted. It is noted that both type A and B devices exhibited degradations in both optoelectronic and low-frequency noise when subjected to current stress. We performed systematic investigations on the degradations of the properties of the devices as a function of the stress time. Experimental results indicate type B devices exhibit much higher rate of degradations than type A devices. The experimental results show that the interface quality of the devices has strong impact on the optoelectronic and low-frequency noise properties of the devices.