Low-frequency noise characterizations of GaN based LEDs with different growth parameters

W. K. Fong, K. K. Leung, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We investigated the effects of the material growth parameters on the properties of 1/f noise in GaN-based LEDs under high current stress. Two sets of growth parameters were used in which the fluxes for trimethyl indium (TMl) and triethyl gallium (TEG) have been varied. TEM results show that type A devices (TMI/[TMI+TEG] = 64.7%) produces much sharper GaN/InGaN interfaces than type B devices (TMI/[TMI+TEG] = 79.9%). Detailed characterizations of the optoelectronic and lowfrequency noise properties of the devices were conducted. It is noted that both type A and B devices exhibited degradations in both optoelectronic and low-frequency noise when subjected to current stress. We performed systematic investigations on the degradations of the properties of the devices as a function of the stress time. Experimental results indicate type B devices exhibit much higher rate of degradations than type A devices. The experimental results show that the interface quality of the devices has strong impact on the optoelectronic and low-frequency noise properties of the devices.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009
Number of pages4
Publication statusPublished - Jul 20 2009
Externally publishedYes
Event20th International Conference on Noise and Fluctuations, ICNF 2009 - Pisa, Italy
Duration: Jun 14 2009Jun 19 2009

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference20th International Conference on Noise and Fluctuations, ICNF 2009


  • Degradation
  • Flicker noise
  • GaN
  • Light emitting diodes
  • Multiple quantum wells

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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