Low-frequency noise characterizations of GaN-based visible-blind UV detectors fabricated using a double buffer layer structure

H. F. Lui, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we report systematic reliability studies of GaN UV detectors exposed to high power UV radiation. GaN epitaxial layers are deposited by rf plasma-assisted molecular beam epitaxy (MBE) utilizing a double buffer layer structure. Our studies show that the optimal buffer layer structure consists of a conventional AlN high-temperature buffer layer (HTBL) and an 800 nm thick GaN intermediate temperature buffer layer (ITBL) deposited at 690°C. Two types of devices are being investigated. Type I devices were fabricated on the optimal double buffer layer structure. Type II devices have only a conventional AlN buffer layer. Flicker noise measurement is used to monitor the degradation of the device due to optical stress. In addition, I-V and responsivity measurements were also performed. The experimental results are consistent with each other which show that the degradation of the devices arises from the generation of crystalline defects at the Schottky junction due to the exposure of the devices to the high power UV radiation. Both types of devices demonstrate degradation in their optoelectronic properties. However, while type I devices general exhibit gradual and slow degradations type II devices exhibit catastrophic breakdowns in the device characteristics. Our experimental data show that visible-blind UV detectors fabricated on the optimized double buffer layer structure indicate significant improvements in the radiation hardness of the devices.

Original languageEnglish
Title of host publicationNoise and Fluctuations in Circuits, Devices, and Materials
Volume6600
DOIs
Publication statusPublished - Nov 23 2007
Externally publishedYes
EventNoise and Fluctuations in Circuits, Devices, and Materials - Florence, Italy
Duration: May 21 2007May 24 2007

Conference

ConferenceNoise and Fluctuations in Circuits, Devices, and Materials
CountryItaly
CityFlorence
Period5/21/075/24/07

Fingerprint

Ultraviolet detectors
Buffer layers
buffers
low frequencies
detectors
Degradation
Ultraviolet radiation
degradation
Epitaxial layers
radiation
Molecular beam epitaxy
Optoelectronic devices
flicker
Hardness
Crystalline materials
noise measurement
Plasmas
Radiation
Temperature
Defects

Keywords

  • Double buffer layer structure
  • Flicker noise
  • GaN
  • Molecular beam epitaxy
  • Radiation hardness
  • UV detectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Lui, H. F., Fong, W. K., & Surya, C. (2007). Low-frequency noise characterizations of GaN-based visible-blind UV detectors fabricated using a double buffer layer structure. In Noise and Fluctuations in Circuits, Devices, and Materials (Vol. 6600). [66000D] https://doi.org/10.1117/12.724978

Low-frequency noise characterizations of GaN-based visible-blind UV detectors fabricated using a double buffer layer structure. / Lui, H. F.; Fong, W. K.; Surya, C.

Noise and Fluctuations in Circuits, Devices, and Materials. Vol. 6600 2007. 66000D.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lui, HF, Fong, WK & Surya, C 2007, Low-frequency noise characterizations of GaN-based visible-blind UV detectors fabricated using a double buffer layer structure. in Noise and Fluctuations in Circuits, Devices, and Materials. vol. 6600, 66000D, Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, 5/21/07. https://doi.org/10.1117/12.724978
Lui, H. F. ; Fong, W. K. ; Surya, C. / Low-frequency noise characterizations of GaN-based visible-blind UV detectors fabricated using a double buffer layer structure. Noise and Fluctuations in Circuits, Devices, and Materials. Vol. 6600 2007.
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