Abstract
Silicon dioxide passivated back-to-back Schottky diodes were fabricated by depositing Ni on rf plasmaassisted molecular beam epitaxy-grown GaN utilizing a unique double buffer layer structure. In this study, both low-frequency noise and deep-level transient Fourier spectroscopy (DLTFS) measurements were conducted to characterize the effects of intermediate-temperature buffer layers (ITBLs) on the hot-electron hardness of GaN Schottky diodes. Device A was fabricated with a double buffer layer consisting of a thin AlN high-temperature buffer layer (HTBL) and a GaN ITBL. Device B consists of a single AlN HTBL. Low-frequency noise results measured from the as-deposited devices show a significant reduction in the noise level, over an order of magnitude, for device A indicative of the substantial reduction in the trap density in the GaN thin films deposited on ITBLs. Hot-electron hardness of the devices was examined through the application of high voltage stress. The increase in the low-frequency noise for device A after voltage stressing is much smaller and no detectable deep-level is observed by both low-frequency noise and DLTFS techniques. However, both characterization techniques indicate a generation of a deep-level at 780 meV below the conduction band edge for device B. Based on detailed optical and electrical characterizations of the samples, the improved device properties for device A are attributed to the relaxation of residue strain in the epilayer during growth due to the utilization of ITBL.
| Original language | English |
|---|---|
| Pages (from-to) | 2396-2399 |
| Number of pages | 4 |
| Journal | Physica Status Solidi C: Conferences |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Dec 1 2003 |
| Externally published | Yes |
| Event | 5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: May 25 2003 → May 30 2003 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers. / Fong, W. K.; Leung, B. H.; Surya, C.; Lu, L. W.; Ge, W. K.
In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2396-2399.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers
AU - Fong, W. K.
AU - Leung, B. H.
AU - Surya, C.
AU - Lu, L. W.
AU - Ge, W. K.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - Silicon dioxide passivated back-to-back Schottky diodes were fabricated by depositing Ni on rf plasmaassisted molecular beam epitaxy-grown GaN utilizing a unique double buffer layer structure. In this study, both low-frequency noise and deep-level transient Fourier spectroscopy (DLTFS) measurements were conducted to characterize the effects of intermediate-temperature buffer layers (ITBLs) on the hot-electron hardness of GaN Schottky diodes. Device A was fabricated with a double buffer layer consisting of a thin AlN high-temperature buffer layer (HTBL) and a GaN ITBL. Device B consists of a single AlN HTBL. Low-frequency noise results measured from the as-deposited devices show a significant reduction in the noise level, over an order of magnitude, for device A indicative of the substantial reduction in the trap density in the GaN thin films deposited on ITBLs. Hot-electron hardness of the devices was examined through the application of high voltage stress. The increase in the low-frequency noise for device A after voltage stressing is much smaller and no detectable deep-level is observed by both low-frequency noise and DLTFS techniques. However, both characterization techniques indicate a generation of a deep-level at 780 meV below the conduction band edge for device B. Based on detailed optical and electrical characterizations of the samples, the improved device properties for device A are attributed to the relaxation of residue strain in the epilayer during growth due to the utilization of ITBL.
AB - Silicon dioxide passivated back-to-back Schottky diodes were fabricated by depositing Ni on rf plasmaassisted molecular beam epitaxy-grown GaN utilizing a unique double buffer layer structure. In this study, both low-frequency noise and deep-level transient Fourier spectroscopy (DLTFS) measurements were conducted to characterize the effects of intermediate-temperature buffer layers (ITBLs) on the hot-electron hardness of GaN Schottky diodes. Device A was fabricated with a double buffer layer consisting of a thin AlN high-temperature buffer layer (HTBL) and a GaN ITBL. Device B consists of a single AlN HTBL. Low-frequency noise results measured from the as-deposited devices show a significant reduction in the noise level, over an order of magnitude, for device A indicative of the substantial reduction in the trap density in the GaN thin films deposited on ITBLs. Hot-electron hardness of the devices was examined through the application of high voltage stress. The increase in the low-frequency noise for device A after voltage stressing is much smaller and no detectable deep-level is observed by both low-frequency noise and DLTFS techniques. However, both characterization techniques indicate a generation of a deep-level at 780 meV below the conduction band edge for device B. Based on detailed optical and electrical characterizations of the samples, the improved device properties for device A are attributed to the relaxation of residue strain in the epilayer during growth due to the utilization of ITBL.
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U2 - 10.1002/pssc.200303393
DO - 10.1002/pssc.200303393
M3 - Conference article
SP - 2396
EP - 2399
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 7
ER -