Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers

W. K. Fong, B. H. Leung, C. Surya, L. W. Lu, W. K. Ge

Research output: Contribution to journalConference article

Abstract

Silicon dioxide passivated back-to-back Schottky diodes were fabricated by depositing Ni on rf plasmaassisted molecular beam epitaxy-grown GaN utilizing a unique double buffer layer structure. In this study, both low-frequency noise and deep-level transient Fourier spectroscopy (DLTFS) measurements were conducted to characterize the effects of intermediate-temperature buffer layers (ITBLs) on the hot-electron hardness of GaN Schottky diodes. Device A was fabricated with a double buffer layer consisting of a thin AlN high-temperature buffer layer (HTBL) and a GaN ITBL. Device B consists of a single AlN HTBL. Low-frequency noise results measured from the as-deposited devices show a significant reduction in the noise level, over an order of magnitude, for device A indicative of the substantial reduction in the trap density in the GaN thin films deposited on ITBLs. Hot-electron hardness of the devices was examined through the application of high voltage stress. The increase in the low-frequency noise for device A after voltage stressing is much smaller and no detectable deep-level is observed by both low-frequency noise and DLTFS techniques. However, both characterization techniques indicate a generation of a deep-level at 780 meV below the conduction band edge for device B. Based on detailed optical and electrical characterizations of the samples, the improved device properties for device A are attributed to the relaxation of residue strain in the epilayer during growth due to the utilization of ITBL.

Original languageEnglish
Pages (from-to)2396-2399
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - Dec 1 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

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Schottky diodes
buffers
low frequencies
temperature
hot electrons
hardness
spectroscopy
high voltages
conduction bands
molecular beam epitaxy
traps
silicon dioxide
electric potential
thin films

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers. / Fong, W. K.; Leung, B. H.; Surya, C.; Lu, L. W.; Ge, W. K.

In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2396-2399.

Research output: Contribution to journalConference article

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