Low-frequency noise in AIGaN-GaN dopedchannel heterostructure field effect transistors grown on insulating SiC substrates

D. V. Kuksenkov, G. E. Giudice, H. Temkin, R. Gaska, A. Ping, I. Adesida

Research output: Contribution to journalArticle

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Abstract

The authors report low-frequency noise measurements of dopedchannel GaN/AlGaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1Hz-100kHz the observed noise is of the 1/f type, and the estimated value of the Hooge constant αH, is ∼10-3.

Original languageEnglish
Pages (from-to)2274-2276
Number of pages3
JournalElectronics Letters
Volume34
Issue number23
Publication statusPublished - Nov 12 1998
Externally publishedYes

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High electron mobility transistors
Silicon carbide
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Low-frequency noise in AIGaN-GaN dopedchannel heterostructure field effect transistors grown on insulating SiC substrates. / Kuksenkov, D. V.; Giudice, G. E.; Temkin, H.; Gaska, R.; Ping, A.; Adesida, I.

In: Electronics Letters, Vol. 34, No. 23, 12.11.1998, p. 2274-2276.

Research output: Contribution to journalArticle

Kuksenkov, D. V. ; Giudice, G. E. ; Temkin, H. ; Gaska, R. ; Ping, A. ; Adesida, I. / Low-frequency noise in AIGaN-GaN dopedchannel heterostructure field effect transistors grown on insulating SiC substrates. In: Electronics Letters. 1998 ; Vol. 34, No. 23. pp. 2274-2276.
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AU - Ping, A.

AU - Adesida, I.

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