@inproceedings{f3366ed09d5a4a3b874dddda2b3db3eb,
title = "Low-frequency noise in GaN diodes",
abstract = "In this paper we will investigate the origin of low-frequency excess noise in GaN-based LEDs. We will present experimental results on the impact of material growth processes on the properties of the low-frequency noise. Based on the results we will present a model on the underlying process for low-frequency excess noise in GaN-based LED structures and their relationship with the degradation of the device due to hot-electron stressing. We also demonstrate the use of low-frequency noise measurement as a characterization tool for the optimization of the growth parameters for the multiple quantum wells.",
keywords = "flicker noise, GaN LEDs, hot-electron degradation, Nano-ELOG",
author = "Leung, {K. K.} and Fong, {W. K.} and C. Surya",
year = "2011",
month = sep,
day = "19",
doi = "10.1109/ICNF.2011.5994325",
language = "English",
isbn = "9781457701924",
series = "Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011",
pages = "291--296",
booktitle = "Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011",
note = "21st International Conference on Noise and Fluctuations, ICNF 2011 ; Conference date: 12-06-2011 Through 16-06-2011",
}