Low-frequency noise in GaN diodes

K. K. Leung; W. K. Fong; C. Surya

doi:10.1109/ICNF.2011.5994325

Low-frequency noise in GaN diodes

K. K. Leung, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper we will investigate the origin of low-frequency excess noise in GaN-based LEDs. We will present experimental results on the impact of material growth processes on the properties of the low-frequency noise. Based on the results we will present a model on the underlying process for low-frequency excess noise in GaN-based LED structures and their relationship with the degradation of the device due to hot-electron stressing. We also demonstrate the use of low-frequency noise measurement as a characterization tool for the optimization of the growth parameters for the multiple quantum wells.

Original language	English
Title of host publication	Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
Pages	291-296
Number of pages	6
DOIs	https://doi.org/10.1109/ICNF.2011.5994325
Publication status	Published - Sep 19 2011
Externally published	Yes
Event	21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada Duration: Jun 12 2011 → Jun 16 2011

Publication series

Name	Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

Conference

Conference	21st International Conference on Noise and Fluctuations, ICNF 2011
Country	Canada
City	Toronto, ON
Period	6/12/11 → 6/16/11

Keywords

flicker noise
GaN LEDs
hot-electron degradation
Nano-ELOG

ASJC Scopus subject areas

Electrical and Electronic Engineering
Mechanical Engineering

Access to Document

10.1109/ICNF.2011.5994325

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Low-frequency noise in GaN diodes. / Leung, K. K.; Fong, W. K.; Surya, C.

Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. 2011. p. 291-296 5994325 (Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Leung, KK, Fong, WK & Surya, C 2011, Low-frequency noise in GaN diodes. in Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011., 5994325, Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011, pp. 291-296, 21st International Conference on Noise and Fluctuations, ICNF 2011, Toronto, ON, Canada, 6/12/11. https://doi.org/10.1109/ICNF.2011.5994325

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