Low-frequency noise in GaN diodes

K. K. Leung, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper we will investigate the origin of low-frequency excess noise in GaN-based LEDs. We will present experimental results on the impact of material growth processes on the properties of the low-frequency noise. Based on the results we will present a model on the underlying process for low-frequency excess noise in GaN-based LED structures and their relationship with the degradation of the device due to hot-electron stressing. We also demonstrate the use of low-frequency noise measurement as a characterization tool for the optimization of the growth parameters for the multiple quantum wells.

Original languageEnglish
Title of host publicationProceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
Pages291-296
Number of pages6
DOIs
Publication statusPublished - Sep 19 2011
Externally publishedYes
Event21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada
Duration: Jun 12 2011Jun 16 2011

Publication series

NameProceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

Conference

Conference21st International Conference on Noise and Fluctuations, ICNF 2011
CountryCanada
CityToronto, ON
Period6/12/116/16/11

Keywords

  • flicker noise
  • GaN LEDs
  • hot-electron degradation
  • Nano-ELOG

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

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