Low-frequency noise in laser-debonded GaN films

C. P. Chan, B. H. Leung, Y. H. Loke, H. C. Man, T. M. Yue, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-frequency noise was measured from laser-debonded HVPE-grown GaN films. Substantial increase in thenoise was seen for the 5 μm thick films, indicating generation of localized states due to laser illumination. For the 20 μm thick films, low-frequency noise measured from the debonded sample is found to be similar to the control sample, indicating the material degradation is limited to the region close to the GaN-sapphire interface.

Original languageEnglish
Title of host publication2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages83-86
Number of pages4
ISBN (Electronic)0780377494, 9780780377493
DOIs
Publication statusPublished - Jan 1 2003
Externally publishedYes
EventIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong
Duration: Dec 16 2003Dec 18 2003

Publication series

Name2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
CountryHong Kong
CityTsimshatsui, Kowloon
Period12/16/0312/18/03

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Chan, C. P., Leung, B. H., Loke, Y. H., Man, H. C., Yue, T. M., & Surya, C. (2003). Low-frequency noise in laser-debonded GaN films. In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 (pp. 83-86). [1283488] (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2003.1283488