Low-frequency noise properties of double channel AlGaN/GaN HEMTs

S. K. Jha; C. Surya; K. J. Chen; K. M. Lau; E. Jelencovic

doi:10.1016/j.sse.2007.10.002

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

S. K. Jha, C. Surya, K. J. Chen, K. M. Lau, E. Jelencovic

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10^-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.

Original language	English
Pages (from-to)	606-611
Number of pages	6
Journal	Solid-State Electronics
Volume	52
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2007.10.002
Publication status	Published - May 1 2008
Externally published	Yes

Keywords

Dual channel
GaN
HEMT
Hooge parameter
Low-frequency noise

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2007.10.002

Fingerprint Dive into the research topics of 'Low-frequency noise properties of double channel AlGaN/GaN HEMTs'. Together they form a unique fingerprint.

Cite this

@article{8d48c189ff98482f836cc12f7a272aae,

title = "Low-frequency noise properties of double channel AlGaN/GaN HEMTs",

abstract = "Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.",

keywords = "Dual channel, GaN, HEMT, Hooge parameter, Low-frequency noise",

author = "Jha, {S. K.} and C. Surya and Chen, {K. J.} and Lau, {K. M.} and E. Jelencovic",

note = "Funding Information: This project is funded by RGC grant PolyU 5226/03E. Further support is provided by a University Research Grant of the Hong Kong Polytechnic University. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

month = may,

day = "1",

doi = "10.1016/j.sse.2007.10.002",

language = "English",

volume = "52",

pages = "606--611",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Low-frequency noise properties of double channel AlGaN/GaN HEMTs

AU - Jha, S. K.

AU - Surya, C.

AU - Chen, K. J.

AU - Lau, K. M.

AU - Jelencovic, E.

N1 - Funding Information: This project is funded by RGC grant PolyU 5226/03E. Further support is provided by a University Research Grant of the Hong Kong Polytechnic University. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.

AB - Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.

KW - Dual channel

KW - GaN

KW - HEMT

KW - Hooge parameter

KW - Low-frequency noise

UR - http://www.scopus.com/inward/record.url?scp=41449092291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41449092291&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.10.002

DO - 10.1016/j.sse.2007.10.002

M3 - Article

AN - SCOPUS:41449092291

VL - 52

SP - 606

EP - 611

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 5

ER -

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this