Low-frequency noise properties of double channel AlGaN/GaN HEMTs

S. K. Jha; C. Surya; K. J. Chen; K. M. Lau; E. Jelencovic

doi:10.1016/j.sse.2007.10.002

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

S. K. Jha, C. Surya, K. J. Chen, K. M. Lau, E. Jelencovic

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10^-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.

Original language	English
Pages (from-to)	606-611
Number of pages	6
Journal	Solid-State Electronics
Volume	52
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2007.10.002
Publication status	Published - May 1 2008
Externally published	Yes

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Keywords

Dual channel
GaN
HEMT
Hooge parameter
Low-frequency noise

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Jha, S. K., Surya, C., Chen, K. J., Lau, K. M., & Jelencovic, E. (2008). Low-frequency noise properties of double channel AlGaN/GaN HEMTs. Solid-State Electronics, 52(5), 606-611. https://doi.org/10.1016/j.sse.2007.10.002

@article{8d48c189ff98482f836cc12f7a272aae,

title = "Low-frequency noise properties of double channel AlGaN/GaN HEMTs",

abstract = "Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.",

keywords = "Dual channel, GaN, HEMT, Hooge parameter, Low-frequency noise",

author = "Jha, {S. K.} and C. Surya and Chen, {K. J.} and Lau, {K. M.} and E. Jelencovic",

year = "2008",

month = may

day = "1",

doi = "10.1016/j.sse.2007.10.002",

language = "English",

volume = "52",

pages = "606--611",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Low-frequency noise properties of double channel AlGaN/GaN HEMTs

AU - Jha, S. K.

AU - Surya, C.

AU - Chen, K. J.

AU - Lau, K. M.

AU - Jelencovic, E.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.

AB - Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.

KW - Dual channel

KW - GaN

KW - HEMT

KW - Hooge parameter

KW - Low-frequency noise

UR - http://www.scopus.com/inward/record.url?scp=41449092291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41449092291&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.10.002

DO - 10.1016/j.sse.2007.10.002

M3 - Article

AN - SCOPUS:41449092291

VL - 52

SP - 606

EP - 611

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 5

ER -

Access to Document

10.1016/j.sse.2007.10.002