Low-frequency noise properties of double channel AlGaN/GaN HEMTs

S. K. Jha, C. Surya, K. J. Chen, K. M. Lau, E. Jelencovic

Research output: Contribution to journalArticle

11 Citations (Scopus)


Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.

Original languageEnglish
Pages (from-to)606-611
Number of pages6
JournalSolid-State Electronics
Issue number5
Publication statusPublished - May 1 2008
Externally publishedYes



  • Dual channel
  • GaN
  • HEMT
  • Hooge parameter
  • Low-frequency noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Jha, S. K., Surya, C., Chen, K. J., Lau, K. M., & Jelencovic, E. (2008). Low-frequency noise properties of double channel AlGaN/GaN HEMTs. Solid-State Electronics, 52(5), 606-611. https://doi.org/10.1016/j.sse.2007.10.002