Abstract
Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.
Original language | English |
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Pages (from-to) | 606-611 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 52 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 1 2008 |
Externally published | Yes |
Keywords
- Dual channel
- GaN
- HEMT
- Hooge parameter
- Low-frequency noise
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry