Low-frequency noise properties of double channel AlGaN/GaN HEMTs

S. K. Jha, C. Surya, K. J. Chen, K. M. Lau, E. Jelencovic

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10-3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.

Original languageEnglish
Pages (from-to)606-611
Number of pages6
JournalSolid-State Electronics
Volume52
Issue number5
DOIs
Publication statusPublished - May 1 2008
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
low frequencies
Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Activation energy
Temperature
metalorganic chemical vapor deposition
sapphire
Substrates
traps
activation energy
room temperature
aluminum gallium nitride
temperature

Keywords

  • Dual channel
  • GaN
  • HEMT
  • Hooge parameter
  • Low-frequency noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Low-frequency noise properties of double channel AlGaN/GaN HEMTs. / Jha, S. K.; Surya, C.; Chen, K. J.; Lau, K. M.; Jelencovic, E.

In: Solid-State Electronics, Vol. 52, No. 5, 01.05.2008, p. 606-611.

Research output: Contribution to journalArticle

Jha, S. K. ; Surya, C. ; Chen, K. J. ; Lau, K. M. ; Jelencovic, E. / Low-frequency noise properties of double channel AlGaN/GaN HEMTs. In: Solid-State Electronics. 2008 ; Vol. 52, No. 5. pp. 606-611.
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