Abstract
Low loss high mesa optical waveguides were fabricated on InGaAsP/InP heterostructures by utilizing inductively-coupled-plasma reactive ion etching (ICP-RIE) and electron beam lithography technique. The fabrication process was optimized by measuring sidewall roughness of deep-etched wave-guides. Atomic force microscope loaded with carbon nanotude was used to obtain three-dimensional image of the etched sidewall of waveguides. The obtained statistical information such as rms roughness and correlation length was used to theoretically calculate scattering loss of waveguides. Several waveguides with different number of sharp bends and the length were fabricated and their propagation losses were measured by modified Fabry-Perot method. The measured propagation losses were compared with theoretically calculated losses.
| Original language | English |
|---|---|
| Pages (from-to) | 3562-3566 |
| Number of pages | 5 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 6 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Nov 2006 |
| Externally published | Yes |
Fingerprint
Keywords
- Atomic force microscope
- Fabry-Perot loss measurement
- Integrated optics
- Scattering loss
- Semiconductor optical waveguide
- Sidewall roughness (SWR)
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Materials Science (miscellaneous)
- Engineering (miscellaneous)
Cite this
Low loss high mesa optical waveguides based on InGaAsP/InP heterostructures. / Choi, W. S.; Jang, J. H.; Yu, B. A.; Lee, Y. L.; Zhao, W.; Bae, J. W.; Adesida, I.
In: Journal of Nanoscience and Nanotechnology, Vol. 6, No. 11, 11.2006, p. 3562-3566.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low loss high mesa optical waveguides based on InGaAsP/InP heterostructures
AU - Choi, W. S.
AU - Jang, J. H.
AU - Yu, B. A.
AU - Lee, Y. L.
AU - Zhao, W.
AU - Bae, J. W.
AU - Adesida, I.
PY - 2006/11
Y1 - 2006/11
N2 - Low loss high mesa optical waveguides were fabricated on InGaAsP/InP heterostructures by utilizing inductively-coupled-plasma reactive ion etching (ICP-RIE) and electron beam lithography technique. The fabrication process was optimized by measuring sidewall roughness of deep-etched wave-guides. Atomic force microscope loaded with carbon nanotude was used to obtain three-dimensional image of the etched sidewall of waveguides. The obtained statistical information such as rms roughness and correlation length was used to theoretically calculate scattering loss of waveguides. Several waveguides with different number of sharp bends and the length were fabricated and their propagation losses were measured by modified Fabry-Perot method. The measured propagation losses were compared with theoretically calculated losses.
AB - Low loss high mesa optical waveguides were fabricated on InGaAsP/InP heterostructures by utilizing inductively-coupled-plasma reactive ion etching (ICP-RIE) and electron beam lithography technique. The fabrication process was optimized by measuring sidewall roughness of deep-etched wave-guides. Atomic force microscope loaded with carbon nanotude was used to obtain three-dimensional image of the etched sidewall of waveguides. The obtained statistical information such as rms roughness and correlation length was used to theoretically calculate scattering loss of waveguides. Several waveguides with different number of sharp bends and the length were fabricated and their propagation losses were measured by modified Fabry-Perot method. The measured propagation losses were compared with theoretically calculated losses.
KW - Atomic force microscope
KW - Fabry-Perot loss measurement
KW - Integrated optics
KW - Scattering loss
KW - Semiconductor optical waveguide
KW - Sidewall roughness (SWR)
UR - http://www.scopus.com/inward/record.url?scp=33845730894&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33845730894&partnerID=8YFLogxK
U2 - 10.1166/jnn.2006.057
DO - 10.1166/jnn.2006.057
M3 - Article
C2 - 17252812
AN - SCOPUS:33845730894
VL - 6
SP - 3562
EP - 3566
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 11
ER -