Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems

P. Fay, W. Wohlmuth, A. Mahajan, C. Caneau, S. Chandrasekhar, I. Adesida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A high-speed monolithically integrated photoreceiver using a pin photodiode and low-noise high-electron mobility transistor (HEMT)-based electrical amplifier is reported. The photoreceiver uses a three-stage transimpedance amplifier with a bandwidth of 8.3 GHz. An on-wafer average input-referred noise current spectral density of 8.82 pA/Hz 1/2 was measured for the photoreceivers. Operation of the photoreceivers at bit rates up to 12 Gb/s was experimentally verified, and bit-error-rate (BER) measurements were performed. The photoreceivers demonstrated a sensitivity of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a BER of 10 -9 and nonreturn-to-zero (NRZ), 2 31-1 pattern length pseudorandom bit sequence (PRBS) data at a wavelength of 1.55 μm. To the authors' knowledge, these are the first reported measured sensitivities for HEMT-based monolithic receivers using a long 2 31-1 pattern length at bit rates of 10 and 12 Gb/s, and represent the best directly measured sensitivities for monolithic HEMT-based photoreceivers at these bit rates.

Original languageEnglish
Pages (from-to)713-715
Number of pages3
JournalIEEE Photonics Technology Letters
Volume10
Issue number3
Publication statusPublished - Mar 1998
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
low noise
Wavelength
bit error rate
wavelengths
Bit error rate
sensitivity
amplifiers
Spectral density
Operational amplifiers
Photodiodes
photodiodes
receivers
high speed
wafers
bandwidth
Bandwidth

Keywords

  • Optoelectronic integrated circuits
  • p-i-n photodiodes
  • Photoreceiver noise
  • Photoreceivers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems. / Fay, P.; Wohlmuth, W.; Mahajan, A.; Caneau, C.; Chandrasekhar, S.; Adesida, I.

In: IEEE Photonics Technology Letters, Vol. 10, No. 3, 03.1998, p. 713-715.

Research output: Contribution to journalArticle

Fay, P. ; Wohlmuth, W. ; Mahajan, A. ; Caneau, C. ; Chandrasekhar, S. ; Adesida, I. / Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems. In: IEEE Photonics Technology Letters. 1998 ; Vol. 10, No. 3. pp. 713-715.
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