Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

Jaesun Lee, Minjun Yan, Benedict Ofuonye, Jaehyung Jang, X. Gao, Shiping Guo, Ilesanmi Adesida

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Mo/Al/Mo/Au metallization scheme was investigated to develop low-resistance ohmic contacts on InAlN/AlN/GaN field-effect transistor heterostructure using a pre-metallization surface treatment with SiCl 4 plasma in a reactive ion etching system and a relatively low-temperature anneal at 650 °C. The contact resistance and specific contact resistivity were dramatically improved to as low as 0.15 ω mm and 7.8 × 10 -7 ω cm 2 at 650 °C, respectively.

Original languageEnglish
Pages (from-to)1538-1540
Number of pages3
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume208
Issue number7
DOIs
Publication statusPublished - Jul 2011
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
Metallizing
Heterojunctions
electric contacts
Reactive ion etching
High electron mobility transistors
Contact resistance
contact resistance
surface treatment
Surface treatment
field effect transistors
etching
Plasmas
electrical resistivity
ions
Temperature

Keywords

  • InAlN/GaN HEMTs
  • Mo/Al/Mo/Au metallization
  • SiCl pre-metallization treatment

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure. / Lee, Jaesun; Yan, Minjun; Ofuonye, Benedict; Jang, Jaehyung; Gao, X.; Guo, Shiping; Adesida, Ilesanmi.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 208, No. 7, 07.2011, p. 1538-1540.

Research output: Contribution to journalArticle

Lee, Jaesun ; Yan, Minjun ; Ofuonye, Benedict ; Jang, Jaehyung ; Gao, X. ; Guo, Shiping ; Adesida, Ilesanmi. / Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure. In: Physica Status Solidi (A) Applications and Materials Science. 2011 ; Vol. 208, No. 7. pp. 1538-1540.
@article{bae64f336c60454c883106b0ed6b0d49,
title = "Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure",
abstract = "Mo/Al/Mo/Au metallization scheme was investigated to develop low-resistance ohmic contacts on InAlN/AlN/GaN field-effect transistor heterostructure using a pre-metallization surface treatment with SiCl 4 plasma in a reactive ion etching system and a relatively low-temperature anneal at 650 °C. The contact resistance and specific contact resistivity were dramatically improved to as low as 0.15 ω mm and 7.8 × 10 -7 ω cm 2 at 650 °C, respectively.",
keywords = "InAlN/GaN HEMTs, Mo/Al/Mo/Au metallization, SiCl pre-metallization treatment",
author = "Jaesun Lee and Minjun Yan and Benedict Ofuonye and Jaehyung Jang and X. Gao and Shiping Guo and Ilesanmi Adesida",
year = "2011",
month = "7",
doi = "10.1002/pssa.201001096",
language = "English",
volume = "208",
pages = "1538--1540",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "7",

}

TY - JOUR

T1 - Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

AU - Lee, Jaesun

AU - Yan, Minjun

AU - Ofuonye, Benedict

AU - Jang, Jaehyung

AU - Gao, X.

AU - Guo, Shiping

AU - Adesida, Ilesanmi

PY - 2011/7

Y1 - 2011/7

N2 - Mo/Al/Mo/Au metallization scheme was investigated to develop low-resistance ohmic contacts on InAlN/AlN/GaN field-effect transistor heterostructure using a pre-metallization surface treatment with SiCl 4 plasma in a reactive ion etching system and a relatively low-temperature anneal at 650 °C. The contact resistance and specific contact resistivity were dramatically improved to as low as 0.15 ω mm and 7.8 × 10 -7 ω cm 2 at 650 °C, respectively.

AB - Mo/Al/Mo/Au metallization scheme was investigated to develop low-resistance ohmic contacts on InAlN/AlN/GaN field-effect transistor heterostructure using a pre-metallization surface treatment with SiCl 4 plasma in a reactive ion etching system and a relatively low-temperature anneal at 650 °C. The contact resistance and specific contact resistivity were dramatically improved to as low as 0.15 ω mm and 7.8 × 10 -7 ω cm 2 at 650 °C, respectively.

KW - InAlN/GaN HEMTs

KW - Mo/Al/Mo/Au metallization

KW - SiCl pre-metallization treatment

UR - http://www.scopus.com/inward/record.url?scp=79960082731&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960082731&partnerID=8YFLogxK

U2 - 10.1002/pssa.201001096

DO - 10.1002/pssa.201001096

M3 - Article

VL - 208

SP - 1538

EP - 1540

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 7

ER -