Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

Jaesun Lee, Minjun Yan, Benedict Ofuonye, Jaehyung Jang, X. Gao, Shiping Guo, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Mo/Al/Mo/Au metallization scheme was investigated to develop low-resistance ohmic contacts on InAlN/AlN/GaN field-effect transistor heterostructure using a pre-metallization surface treatment with SiCl 4 plasma in a reactive ion etching system and a relatively low-temperature anneal at 650 °C. The contact resistance and specific contact resistivity were dramatically improved to as low as 0.15 ω mm and 7.8 × 10 -7 ω cm 2 at 650 °C, respectively.

Original languageEnglish
Pages (from-to)1538-1540
Number of pages3
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume208
Issue number7
DOIs
Publication statusPublished - Jul 2011

Keywords

  • InAlN/GaN HEMTs
  • Mo/Al/Mo/Au metallization
  • SiCl pre-metallization treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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