Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme

J. W. Bae, T. Hossain, I. Adesida, K. H. Bogart, D. Koleske, A. A. Allerman, J. H. Jang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Ohmic contacts on p -type GaN utilizing PdIrAu metallization were fabricated and characterized. Metallized samples that were rapid thermally annealed at 400 °C for 1 min exhibited linear current-voltage characteristics. Specific ohmic contact resistivities as low as 2× 10-5 Ω cm2 were achieved. Auger electron spectroscopy and x-ray photoelectron spectroscopy depth profiles of annealed PdIrAu contact revealed the formation of Pd- and Ir-related alloys at the metal-semiconductor junction with the creation of Ga vacancies below the contact. The excellent contact resistance obtained is attributed to the formation of these Ga vacancies which resulted in the reduction of the depletion region width at the junction.

Original languageEnglish
Pages (from-to)1072-1075
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number3
DOIs
Publication statusPublished - Dec 1 2005

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme'. Together they form a unique fingerprint.

  • Cite this