Ohmic contacts based on Pd/Ir/Au metallisations have been formed on highly doped (5 × 1019 cm-3) p-type GaAsSb. Typical hole mobility in the MOCVD-grown p-GaAsSb was measured to be 50 cm2/Vs. Electrical characteristics of ohmic contacts were measured utilising the transfer length method. The ohmic contact exhibited specific contact resistivity less than 10-8 Ω-cm2 and transfer length less than 100 nm. X-ray photoelectron spectroscopy study was also utilised to investigate the interactions between the multilayer metallisations and the ternary GaAsSb compound semiconductor.
ASJC Scopus subject areas
- Electrical and Electronic Engineering