Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb

J. H. Jang, H. K. Cho, J. W. Bae, N. Pan, I. Adesida

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ohmic contacts based on Pd/Ir/Au metallisations have been formed on highly doped (5 × 1019 cm-3) p-type GaAsSb. Typical hole mobility in the MOCVD-grown p-GaAsSb was measured to be 50 cm2/Vs. Electrical characteristics of ohmic contacts were measured utilising the transfer length method. The ohmic contact exhibited specific contact resistivity less than 10-8 Ω-cm2 and transfer length less than 100 nm. X-ray photoelectron spectroscopy study was also utilised to investigate the interactions between the multilayer metallisations and the ternary GaAsSb compound semiconductor.

Original languageEnglish
Pages (from-to)1550-1551
Number of pages2
JournalElectronics Letters
Volume40
Issue number24
DOIs
Publication statusPublished - Nov 25 2004
Externally publishedYes

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Ohmic contacts
Metallizing
Hole mobility
Metallorganic chemical vapor deposition
Multilayers
X ray photoelectron spectroscopy
Semiconductor materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb. / Jang, J. H.; Cho, H. K.; Bae, J. W.; Pan, N.; Adesida, I.

In: Electronics Letters, Vol. 40, No. 24, 25.11.2004, p. 1550-1551.

Research output: Contribution to journalArticle

Jang, JH, Cho, HK, Bae, JW, Pan, N & Adesida, I 2004, 'Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb', Electronics Letters, vol. 40, no. 24, pp. 1550-1551. https://doi.org/10.1049/el:20046658
Jang, J. H. ; Cho, H. K. ; Bae, J. W. ; Pan, N. ; Adesida, I. / Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb. In: Electronics Letters. 2004 ; Vol. 40, No. 24. pp. 1550-1551.
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