Low resistance Ti/Pt/Au ohmic contacts to p-type GaN

L. Zhou; W. Lanford; A. T. Ping; I. Adesida; J. W. Yang; A. Khan

doi:10.1063/1.126674

Low resistance Ti/Pt/Au ohmic contacts to p-type GaN

L. Zhou, W. Lanford, A. T. Ping, I. Adesida, J. W. Yang, A. Khan

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (N_A = 3.0×10¹⁷ cm^-3) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700°C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800°C for 2 min. These contacts exhibited a specific contact resistance R_c of 4.2×10^-5 Ω cm² and contact resistivity ρ_c of 21 Ω mm. Possible mechanisms for the lower contact resistivily of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.

Original language	English
Pages (from-to)	3451-3453
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	23
DOIs	https://doi.org/10.1063/1.126674
Publication status	Published - Jun 5 2000
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Low resistance Ti/Pt/Au ohmic contacts to p-type GaN",

abstract = "Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm-3) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700°C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800°C for 2 min. These contacts exhibited a specific contact resistance Rc of 4.2×10-5 Ω cm2 and contact resistivity ρc of 21 Ω mm. Possible mechanisms for the lower contact resistivily of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.",

author = "L. Zhou and W. Lanford and Ping, {A. T.} and I. Adesida and Yang, {J. W.} and A. Khan",

year = "2000",

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T1 - Low resistance Ti/Pt/Au ohmic contacts to p-type GaN

AU - Zhou, L.

AU - Lanford, W.

AU - Ping, A. T.

AU - Adesida, I.

AU - Yang, J. W.

AU - Khan, A.

PY - 2000/6/5

Y1 - 2000/6/5

N2 - Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm-3) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700°C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800°C for 2 min. These contacts exhibited a specific contact resistance Rc of 4.2×10-5 Ω cm2 and contact resistivity ρc of 21 Ω mm. Possible mechanisms for the lower contact resistivily of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.

AB - Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm-3) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700°C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800°C for 2 min. These contacts exhibited a specific contact resistance Rc of 4.2×10-5 Ω cm2 and contact resistivity ρc of 21 Ω mm. Possible mechanisms for the lower contact resistivily of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.

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