Abstract
Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm-3) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700°C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800°C for 2 min. These contacts exhibited a specific contact resistance Rc of 4.2×10-5 Ω cm2 and contact resistivity ρc of 21 Ω mm. Possible mechanisms for the lower contact resistivily of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.
| Original language | English |
|---|---|
| Pages (from-to) | 3451-3453 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 76 |
| Issue number | 23 |
| Publication status | Published - Jun 5 2000 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. / Zhou, L.; Lanford, W.; Ping, A. T.; Adesida, I.; Yang, J. W.; Khan, A.
In: Applied Physics Letters, Vol. 76, No. 23, 05.06.2000, p. 3451-3453.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low resistance Ti/Pt/Au ohmic contacts to p-type GaN
AU - Zhou, L.
AU - Lanford, W.
AU - Ping, A. T.
AU - Adesida, I.
AU - Yang, J. W.
AU - Khan, A.
PY - 2000/6/5
Y1 - 2000/6/5
N2 - Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm-3) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700°C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800°C for 2 min. These contacts exhibited a specific contact resistance Rc of 4.2×10-5 Ω cm2 and contact resistivity ρc of 21 Ω mm. Possible mechanisms for the lower contact resistivily of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.
AB - Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm-3) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700°C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800°C for 2 min. These contacts exhibited a specific contact resistance Rc of 4.2×10-5 Ω cm2 and contact resistivity ρc of 21 Ω mm. Possible mechanisms for the lower contact resistivily of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.
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UR - http://www.scopus.com/inward/citedby.url?scp=0001554974&partnerID=8YFLogxK
M3 - Article
VL - 76
SP - 3451
EP - 3453
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 23
ER -