Abstract
Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm-3) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700°C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800°C for 2 min. These contacts exhibited a specific contact resistance Rc of 4.2×10-5 Ω cm2 and contact resistivity ρc of 21 Ω mm. Possible mechanisms for the lower contact resistivily of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.
Original language | English |
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Pages (from-to) | 3451-3453 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 23 |
DOIs | |
Publication status | Published - Jun 5 2000 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)