Low resistance Ti/Pt/Au ohmic contacts to p-type GaN

L. Zhou, W. Lanford, A. T. Ping, I. Adesida, J. W. Yang, A. Khan

Research output: Contribution to journalArticle

87 Citations (Scopus)

Abstract

Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (NA = 3.0×1017 cm-3) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700°C. The best ohmic contacts were obtained after annealing in a N2 ambient at 800°C for 2 min. These contacts exhibited a specific contact resistance Rc of 4.2×10-5 Ω cm2 and contact resistivity ρc of 21 Ω mm. Possible mechanisms for the lower contact resistivily of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices.

Original languageEnglish
Pages (from-to)3451-3453
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number23
Publication statusPublished - Jun 5 2000
Externally publishedYes

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low resistance
electric contacts
annealing
contact resistance
electrical properties
fabrication
electrical resistivity
electric potential
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Zhou, L., Lanford, W., Ping, A. T., Adesida, I., Yang, J. W., & Khan, A. (2000). Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. Applied Physics Letters, 76(23), 3451-3453.

Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. / Zhou, L.; Lanford, W.; Ping, A. T.; Adesida, I.; Yang, J. W.; Khan, A.

In: Applied Physics Letters, Vol. 76, No. 23, 05.06.2000, p. 3451-3453.

Research output: Contribution to journalArticle

Zhou, L, Lanford, W, Ping, AT, Adesida, I, Yang, JW & Khan, A 2000, 'Low resistance Ti/Pt/Au ohmic contacts to p-type GaN', Applied Physics Letters, vol. 76, no. 23, pp. 3451-3453.
Zhou L, Lanford W, Ping AT, Adesida I, Yang JW, Khan A. Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. Applied Physics Letters. 2000 Jun 5;76(23):3451-3453.
Zhou, L. ; Lanford, W. ; Ping, A. T. ; Adesida, I. ; Yang, J. W. ; Khan, A. / Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. In: Applied Physics Letters. 2000 ; Vol. 76, No. 23. pp. 3451-3453.
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