Low temperature synthesis of graphene nanocomposites using surface passivation of porous silicon nanocrystallites with carbon atoms

Kurbangali B. Tynyshtykbayev, Ardak Ainabаyev, Oleg Kononenko, Maxim Chichkov, Zamart Ramazanova, Ramiz Zulkharnai, Dmitry Roshchupkin, Julia Sorokupudova, Vitaly Starkov, Zinetula Insepov

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents the experimental investigation of the synthesis of graphene carbon nanocomposites (CNC-G) by carbonization of porous silicon (PS) using CVD method at low temperature of T = 350–500 °C. The low-temperature synthesis of CNC-G is explained by a low melting temperature of porous silicon nanocrystallites (nc-PS) formed during electrochemical etching.

Original languageEnglish
Pages (from-to)53-60
Number of pages8
JournalDiamond and Related Materials
Volume92
DOIs
Publication statusPublished - Feb 2019

Keywords

  • Carbonization
  • CVD method
  • Graphenic carbon materials
  • Low-temperature
  • Nanocrystallites
  • Porous silicon
  • Spatially oriented graphene
  • Surface energy
  • Synthesis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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