TY - JOUR
T1 - Magnetic and electronic properties of Fe3O4/PtSe2/Fe3O4 junctions
AU - Toktarbaiuly, Olzat
AU - Syrlybekov, Askar
AU - Mauit, Ozhet
AU - Kurbanova, Aliya
AU - Sugurbekova, Gulnar
AU - Shvets, Igor
N1 - Funding Information:
Authors would like to acknowledge the support of the Ministry of Education and Science of the Republic of Kazakhstan under Grant No. AP05135057, AP08052848 and AP05133733.
Publisher Copyright:
© 2021 Elsevier Ltd. All rights reserved.
PY - 2021
Y1 - 2021
N2 - Two-dimensional (2D) materials with single or a few-atomic layers have attracted significant attention from the scientific community due to their transport properties and potential for technological applications. A variety of 2D materials beyond graphene with different bandgaps have been synthesized in recent years. One of them is platinum diselenide (PtSe2) with the bandgap energy of 1.2 eV at one monolayer. However, the low throughput synthesis of high quality 2D thin films has thus far hindered the development of PtSe2 devices. In this work methods of molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) have been used to fabricate PtSe2 thin films. We have fabricated a prototypical PtSe2 based magnetic tunnel junction (MTJ) with Fe3O4 electrodes. For this purpose, Fe3O4-PtSe2-Fe3O4 trilayers were grown on MgO(100) substrate. The magnetoresistance of the trilayer at room temperature indicates that PtSe2 is a potential candidate as a barrier material for Fe3O4 based magnetic tunnel junctions.
AB - Two-dimensional (2D) materials with single or a few-atomic layers have attracted significant attention from the scientific community due to their transport properties and potential for technological applications. A variety of 2D materials beyond graphene with different bandgaps have been synthesized in recent years. One of them is platinum diselenide (PtSe2) with the bandgap energy of 1.2 eV at one monolayer. However, the low throughput synthesis of high quality 2D thin films has thus far hindered the development of PtSe2 devices. In this work methods of molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) have been used to fabricate PtSe2 thin films. We have fabricated a prototypical PtSe2 based magnetic tunnel junction (MTJ) with Fe3O4 electrodes. For this purpose, Fe3O4-PtSe2-Fe3O4 trilayers were grown on MgO(100) substrate. The magnetoresistance of the trilayer at room temperature indicates that PtSe2 is a potential candidate as a barrier material for Fe3O4 based magnetic tunnel junctions.
KW - FeO
KW - Magnetoresistance
KW - Platinum diselenide
KW - PtSe
KW - Transition metal dichalcogenides
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U2 - 10.1016/j.matpr.2020.11.579
DO - 10.1016/j.matpr.2020.11.579
M3 - Conference article
AN - SCOPUS:85124046212
SN - 2214-7853
VL - 49
SP - 2469
EP - 2473
JO - Materials Today: Proceedings
JF - Materials Today: Proceedings
T2 - 8th International Conference on Nanomaterials and Advanced Energy Storage Systems, INESS 2020
Y2 - 6 August 2020 through 6 August 2020
ER -