MASKED ION BEAM LITHOGRAPHY FOR SUBMICRON-GATE GaAs FET FABRICATION.

M. Zhang, I. Adesida, R. Tiberio, E. D. Wolf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ion beam lithography is a relatively new technique for fabricating high resolution features. We demonstrate the feasibility of fabricating submicron gate GaAs FET by masked ion beam lithography (MIBL) combined with conventional optical lithography. A fully transparent thin silicon film mask was used for MIBL. The electrical performance data of Al/GaAs Schottky diodes and of 0. 2-0. 5 mu m gate GaAs FETs obtained with this hybrid lithography process are also presented.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherAcademic Press
Pages157-164
Number of pages8
ISBN (Print)0120449803
Publication statusPublished - Dec 1 1983

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Zhang, M., Adesida, I., Tiberio, R., & Wolf, E. D. (1983). MASKED ION BEAM LITHOGRAPHY FOR SUBMICRON-GATE GaAs FET FABRICATION. In Unknown Host Publication Title (pp. 157-164). Academic Press.