MBE growth of van der Waals epitaxy using graphene buffer layer

K. K. Leung, W. Wang, Y. Y. Hui, S. F. Wang, W. K. Fong, S. P. Lau, C. H. Lam, C. Surya

Research output: Contribution to conferencePaper

Abstract

SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104 cm-1 at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1 was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

Original languageEnglish
Pages11-13
Number of pages3
DOIs
Publication statusPublished - May 27 2013
Externally publishedYes
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
Duration: Feb 25 2013Feb 26 2013

Conference

Conference2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan
CityKaohsiung
Period2/25/132/26/13

Fingerprint

Buffer layers
Epitaxial growth
Molecular beam epitaxy
Graphene
Energy gap
Lattice mismatch
Hole mobility
Full width at half maximum
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Leung, K. K., Wang, W., Hui, Y. Y., Wang, S. F., Fong, W. K., Lau, S. P., ... Surya, C. (2013). MBE growth of van der Waals epitaxy using graphene buffer layer. 11-13. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512273

MBE growth of van der Waals epitaxy using graphene buffer layer. / Leung, K. K.; Wang, W.; Hui, Y. Y.; Wang, S. F.; Fong, W. K.; Lau, S. P.; Lam, C. H.; Surya, C.

2013. 11-13 Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.

Research output: Contribution to conferencePaper

Leung, KK, Wang, W, Hui, YY, Wang, SF, Fong, WK, Lau, SP, Lam, CH & Surya, C 2013, 'MBE growth of van der Waals epitaxy using graphene buffer layer' Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, 2/25/13 - 2/26/13, pp. 11-13. https://doi.org/10.1109/ISNE.2013.6512273
Leung KK, Wang W, Hui YY, Wang SF, Fong WK, Lau SP et al. MBE growth of van der Waals epitaxy using graphene buffer layer. 2013. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512273
Leung, K. K. ; Wang, W. ; Hui, Y. Y. ; Wang, S. F. ; Fong, W. K. ; Lau, S. P. ; Lam, C. H. ; Surya, C. / MBE growth of van der Waals epitaxy using graphene buffer layer. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.3 p.
@conference{0aa11ab553564f51869fefb453925018,
title = "MBE growth of van der Waals epitaxy using graphene buffer layer",
abstract = "SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104 cm-1 at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1 was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.",
author = "Leung, {K. K.} and W. Wang and Hui, {Y. Y.} and Wang, {S. F.} and Fong, {W. K.} and Lau, {S. P.} and Lam, {C. H.} and C. Surya",
year = "2013",
month = "5",
day = "27",
doi = "10.1109/ISNE.2013.6512273",
language = "English",
pages = "11--13",
note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

}

TY - CONF

T1 - MBE growth of van der Waals epitaxy using graphene buffer layer

AU - Leung, K. K.

AU - Wang, W.

AU - Hui, Y. Y.

AU - Wang, S. F.

AU - Fong, W. K.

AU - Lau, S. P.

AU - Lam, C. H.

AU - Surya, C.

PY - 2013/5/27

Y1 - 2013/5/27

N2 - SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104 cm-1 at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1 was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

AB - SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104 cm-1 at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1 was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

UR - http://www.scopus.com/inward/record.url?scp=84877989280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877989280&partnerID=8YFLogxK

U2 - 10.1109/ISNE.2013.6512273

DO - 10.1109/ISNE.2013.6512273

M3 - Paper

SP - 11

EP - 13

ER -