Measurements of thermally induced nanometer-scale diffusion depth of Pt/Ti/Pt/Au gate metallization on InAlAs/InGaAs high-electron-mobility transistors

Seiyon Kim, Ilesanmi Adesida, Heedon Hwang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Platinum diffusion in InAlAs was investigated utilizing a PtTiPtAu gate contact on an In0.52 Al0.48 As In0.53 Ga0.47 AsInP high-electron-mobility transistor (HEMT) structure. Capacitance-voltage measurements on large gate field-effect transistors and high-resolution cross-sectional transmission electron microscopy enabled the measurement of Pt diffusion depth with nanometer-scale accuracy. A continuous increase in Pt diffusion depth was observed at an annealing temperature of 250 °C with increasing time. After a 40 min anneal, a diffusion depth of 8 nm was measured. Such a deep Pt diffusion in a HEMT structure not only changes device parameters but also constitutes a serious reliability problem during device operation.

Original languageEnglish
Article number232102
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number23
DOIs
Publication statusPublished - Dec 12 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Measurements of thermally induced nanometer-scale diffusion depth of Pt/Ti/Pt/Au gate metallization on InAlAs/InGaAs high-electron-mobility transistors'. Together they form a unique fingerprint.

  • Cite this