Mechanism of flicker noise in a-Si: H thin films

W. Y. Ho, Charles Surya

Research output: Contribution to conferencePaperpeer-review

Abstract

Flicker noise in n-type hydrogenated amorphous silicon is studied from room temperature to about 420 K. The device is first annealed at 450 K and subsequently cooled at rates of 0.5 K/s or 0.02 K/s. The temperature variations of both the voltage noise power spectra and the conductivity of the material exhibit strong dependencies on the cooling rate of the device. The current dependence of the voltage noise power spectra is found to deviate from the power law indicating that the noise arises from a non-linear system. The voltage noise power spectra is found to vary as R p and p is dependent on the temperature and the cooling process of the device. Our experimental data provides strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.

Original languageEnglish
Pages27-30
Number of pages4
Publication statusPublished - Dec 1 1997
Externally publishedYes
EventProceedings of the 1997 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong
Duration: Aug 30 1997Aug 30 1997

Conference

ConferenceProceedings of the 1997 IEEE Hong Kong Electron Devices Meeting
CityHong Kong, Hong Kong
Period8/30/978/30/97

ASJC Scopus subject areas

  • Engineering(all)

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