Mechanism of nonalloyed Al ohmic contacts to n-type ZnO

Al epitaxial layer

Han Ki Kim, Tae Yeon Seong, Koung Kook Kim, Seoug Ju Park, Young Soo Yoon, Ilesanmi Adesida

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

The mechanism of Al ohmic contacts to n-type zinc oxide (ZnO:Al) epitaxial layer was investigated. The formation of an Al-ZnO interfacial phase at room temperature was responsible for the low specific resistivity (8 ± 0.3 × 10-4 Ωcm2). The results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) depth profiles, and glancing angle X-ray diffraction (GXRD) indicate that an interfacial reaction between Al and ZnO results in an increased doping concentration in the region of the ZnO surface resulting in a low specific contact resistivity without the need for a thermal annealing process.

Original languageEnglish
Pages (from-to)976-979
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume43
Issue number3
Publication statusPublished - Mar 2004
Externally publishedYes

Fingerprint

Ohmic contacts
Epitaxial layers
Auger electron spectroscopy
Zinc oxide
Surface chemistry
electric contacts
X ray photoelectron spectroscopy
Doping (additives)
Annealing
X ray diffraction
electrical resistivity
zinc oxides
Auger spectroscopy
electron spectroscopy
x rays
photoelectron spectroscopy
Temperature
annealing
room temperature
profiles

Keywords

  • Auger electron spectroscopy
  • Interfacial reaction
  • Ohmic contact
  • Specific contact resistivity
  • X-ray photoelectron spectroscopy
  • ZnO

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Mechanism of nonalloyed Al ohmic contacts to n-type ZnO : Al epitaxial layer. / Kim, Han Ki; Seong, Tae Yeon; Kim, Koung Kook; Park, Seoug Ju; Yoon, Young Soo; Adesida, Ilesanmi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 43, No. 3, 03.2004, p. 976-979.

Research output: Contribution to journalArticle

Kim, Han Ki ; Seong, Tae Yeon ; Kim, Koung Kook ; Park, Seoug Ju ; Yoon, Young Soo ; Adesida, Ilesanmi. / Mechanism of nonalloyed Al ohmic contacts to n-type ZnO : Al epitaxial layer. In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2004 ; Vol. 43, No. 3. pp. 976-979.
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