Mechanisms of charge transport in anisotype n-TiO 2/p-CdTe heterojunctions

V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, P. D. Maryanchuk, K. S. Ulyanytsky, B. N. Gritsyuk

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Surface-barrier anisotype n-TiO 2/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined.

Original languageEnglish
Pages (from-to)1077-1081
Number of pages5
JournalSemiconductors
Volume45
Issue number8
DOIs
Publication statusPublished - Aug 2011
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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