Metal contacts to n-type GaN

A. C. Schmitz, A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, I. Adesida

Research output: Contribution to journalArticlepeer-review

156 Citations (Scopus)

Abstract

Contacts consisting of various single layer metals to n-type GaN have been formed and characterized. The current-voltage characteristics were measured for 17 different metals (Sc, Hf, Zr, Ag, Al, V, Nb, Ti, Cr, W, Mo, Cu, Co, Au, Pd, Ni, and Pt) deposited on the same epitaxial growth layer. The barrier height, ideality factor, breakdown voltage, and effective Richardson coefficients were measured from those metals which exhibited strong rectifying behavior. The barrier heights for these metal contacts were measured using current-voltage-temperature and capacitance-voltage techniques. It was found that an increase in metal work function correlated with an increase in the barrier height. The surface state density of GaN was approximated to be very similar to CdS and almost a factor of ten less than GaAs.

Original languageEnglish
Pages (from-to)255-260
Number of pages6
JournalJournal of Electronic Materials
Volume27
Issue number4
DOIs
Publication statusPublished - Apr 1998
Externally publishedYes

Keywords

  • Barrier height
  • Gallium nitride (GaN)
  • Schottky contacts

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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