Metamorphic double heterojunction InGaAs/InGaAlAs/InAlAs photodiodes on GaAs substrates for 40 Gbit/s long wavelength optical fiber communication

J. H. Jang, G. Cueva, D. C. Dumka, I. Adesida, P. Fay, W. E. Hoke, P. J. Lemonias

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

Metamorphic InGaAs/InGaAlAs/InAlAs double heterojunction P-i-I-N photodiodes were fabricated on GaAs substrates and characterized. They exhibited a low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a ñ3 dB bandwidth of 38 GHz for 1.55 μm light.

Original languageEnglish
PagesPD6/1-PD6/3
Publication statusPublished - Jan 1 2001
EventOptical Fiber Communication Conference - Anaheim, CA, United States
Duration: Mar 17 2001Mar 22 2001

Other

OtherOptical Fiber Communication Conference
CountryUnited States
CityAnaheim, CA
Period3/17/013/22/01

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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