Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy

W. E. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong, R. J. Bourque, J. H. Jang, G. Cueva, D. C. Dumka, I. Adesida, K. L. Chang, K. C. Hsieh

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Metamorphic HBT and optical PIN diode structures were grown and fabricated and have performances similar to their InP counterparts. Underlying the results, TEM micrographs show that the misfit dislocations generated during metamorphic grading were localized in the buffer layer and that the resultant device layer interfaces were abrupt and planar. Furthermore, metamorphic grading did not result in enhanced beryllium migration in HBT structures. Large M-HBT devices had current gains approaching those of InP HBT devices. M-PIN photodiodes had nearly identical responsivities and bandwidths as InP photodiodes.

Original languageEnglish
Pages (from-to)1505-1509
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
Publication statusPublished - Jul 2001
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
Photodiodes
Molecular beam epitaxy
photodiodes
heterojunctions
molecular beam epitaxy
Substrates
beryllium
Beryllium
Buffer layers
buffers
Dislocations (crystals)
diodes
bandwidth
transmission electron microscopy
Diodes
Transmission electron microscopy
Bandwidth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy. / Hoke, W. E.; Lemonias, P. J.; Kennedy, T. D.; Torabi, A.; Tong, E. K.; Bourque, R. J.; Jang, J. H.; Cueva, G.; Dumka, D. C.; Adesida, I.; Chang, K. L.; Hsieh, K. C.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 4, 07.2001, p. 1505-1509.

Research output: Contribution to journalArticle

Hoke, W. E. ; Lemonias, P. J. ; Kennedy, T. D. ; Torabi, A. ; Tong, E. K. ; Bourque, R. J. ; Jang, J. H. ; Cueva, G. ; Dumka, D. C. ; Adesida, I. ; Chang, K. L. ; Hsieh, K. C. / Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2001 ; Vol. 19, No. 4. pp. 1505-1509.
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AU - Lemonias, P. J.

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AU - Torabi, A.

AU - Tong, E. K.

AU - Bourque, R. J.

AU - Jang, J. H.

AU - Cueva, G.

AU - Dumka, D. C.

AU - Adesida, I.

AU - Chang, K. L.

AU - Hsieh, K. C.

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