Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy

W. E. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong, R. J. Bourque, J. H. Jang, G. Cueva, D. C. Dumka, I. Adesida, K. L. Chang, K. C. Hsieh

Research output: Contribution to journalConference articlepeer-review

25 Citations (Scopus)

Abstract

Metamorphic HBT and optical PIN diode structures were grown and fabricated and have performances similar to their InP counterparts. Underlying the results, TEM micrographs show that the misfit dislocations generated during metamorphic grading were localized in the buffer layer and that the resultant device layer interfaces were abrupt and planar. Furthermore, metamorphic grading did not result in enhanced beryllium migration in HBT structures. Large M-HBT devices had current gains approaching those of InP HBT devices. M-PIN photodiodes had nearly identical responsivities and bandwidths as InP photodiodes.

Original languageEnglish
Pages (from-to)1505-1509
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
Publication statusPublished - Jul 1 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: Oct 15 2000Oct 18 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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