Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy

W. E. Hoke; P. J. Lemonias; T. D. Kennedy; A. Torabi; E. K. Tong; R. J. Bourque; J. H. Jang; G. Cueva; D. C. Dumka; I. Adesida; K. L. Chang; K. C. Hsieh

doi:10.1116/1.1374624

Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy

W. E. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong, R. J. Bourque, J. H. Jang, G. Cueva, D. C. Dumka, I. Adesida, K. L. Chang, K. C. Hsieh

Research output: Contribution to journal › Conference article › peer-review

26 Citations (Scopus)

Abstract

Metamorphic HBT and optical PIN diode structures were grown and fabricated and have performances similar to their InP counterparts. Underlying the results, TEM micrographs show that the misfit dislocations generated during metamorphic grading were localized in the buffer layer and that the resultant device layer interfaces were abrupt and planar. Furthermore, metamorphic grading did not result in enhanced beryllium migration in HBT structures. Large M-HBT devices had current gains approaching those of InP HBT devices. M-PIN photodiodes had nearly identical responsivities and bandwidths as InP photodiodes.

Original language	English
Pages (from-to)	1505-1509
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1374624
Publication status	Published - Jul 2001
Externally published	Yes
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Hoke, W. E., Lemonias, P. J., Kennedy, T. D., Torabi, A., Tong, E. K., Bourque, R. J., Jang, J. H., Cueva, G., Dumka, D. C., Adesida, I., Chang, K. L., & Hsieh, K. C. (2001). Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(4), 1505-1509. https://doi.org/10.1116/1.1374624

Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy. / Hoke, W. E.; Lemonias, P. J.; Kennedy, T. D. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 4, 07.2001, p. 1505-1509.

Research output: Contribution to journal › Conference article › peer-review

Hoke, WE, Lemonias, PJ, Kennedy, TD, Torabi, A, Tong, EK, Bourque, RJ, Jang, JH, Cueva, G, Dumka, DC, Adesida, I, Chang, KL & Hsieh, KC 2001, 'Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 19, no. 4, pp. 1505-1509. https://doi.org/10.1116/1.1374624

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abstract = "Metamorphic HBT and optical PIN diode structures were grown and fabricated and have performances similar to their InP counterparts. Underlying the results, TEM micrographs show that the misfit dislocations generated during metamorphic grading were localized in the buffer layer and that the resultant device layer interfaces were abrupt and planar. Furthermore, metamorphic grading did not result in enhanced beryllium migration in HBT structures. Large M-HBT devices had current gains approaching those of InP HBT devices. M-PIN photodiodes had nearly identical responsivities and bandwidths as InP photodiodes.",

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AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Kennedy, T. D.

AU - Torabi, A.

AU - Tong, E. K.

AU - Bourque, R. J.

AU - Jang, J. H.

AU - Cueva, G.

AU - Dumka, D. C.

AU - Adesida, I.

AU - Chang, K. L.

AU - Hsieh, K. C.

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N2 - Metamorphic HBT and optical PIN diode structures were grown and fabricated and have performances similar to their InP counterparts. Underlying the results, TEM micrographs show that the misfit dislocations generated during metamorphic grading were localized in the buffer layer and that the resultant device layer interfaces were abrupt and planar. Furthermore, metamorphic grading did not result in enhanced beryllium migration in HBT structures. Large M-HBT devices had current gains approaching those of InP HBT devices. M-PIN photodiodes had nearly identical responsivities and bandwidths as InP photodiodes.

AB - Metamorphic HBT and optical PIN diode structures were grown and fabricated and have performances similar to their InP counterparts. Underlying the results, TEM micrographs show that the misfit dislocations generated during metamorphic grading were localized in the buffer layer and that the resultant device layer interfaces were abrupt and planar. Furthermore, metamorphic grading did not result in enhanced beryllium migration in HBT structures. Large M-HBT devices had current gains approaching those of InP HBT devices. M-PIN photodiodes had nearly identical responsivities and bandwidths as InP photodiodes.

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Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy

Abstract

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