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Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy
W. E. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong, R. J. Bourque, J. H. Jang, G. Cueva, D. C. Dumka, I. Adesida, K. L. Chang, K. C. Hsieh
Research output: Contribution to journal › Conference article › peer-review
25
Citations
(Scopus)