Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy

W. E. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong, R. J. Bourque, J. H. Jang, G. Cueva, D. C. Dumka, I. Adesida, K. L. Chang, K. C. Hsieh

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25 Citations (Scopus)

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