Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz

D. C. Dumka, W. E. Hoke, P. J. Lemonias, G. Cueva, I. Adesida

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The growth, fabrication, and characterization of metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) on GaAs substrates are reported. The layer structure is grown using molecular beam epitaxy (MBE). Devices with gate lengths ranging from 0.18 to 1.0 μm have been fabricated. Devices show large saturation current densities with values up to 900 mA/mm. The extrinsic transconductances ranging from 680 mS/mm for 1.0 μm device to over 1.0 S/mm for 0.18 μm device are obtained. Very high cut-off frequencies (fT's) ranging from 32 GHz to 204 GHz are presented.

Original languageEnglish
Pages (from-to)783-786
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999
Externally publishedYes

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Cutoff frequency
Transconductance
High electron mobility transistors
high electron mobility transistors
Molecular beam epitaxy
Current density
Fabrication
Substrates
transconductance
molecular beam epitaxy
cut-off
current density
saturation
fabrication
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz. / Dumka, D. C.; Hoke, W. E.; Lemonias, P. J.; Cueva, G.; Adesida, I.

In: Technical Digest - International Electron Devices Meeting, 1999, p. 783-786.

Research output: Contribution to journalArticle

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AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Cueva, G.

AU - Adesida, I.

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