Metamorphic in0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200GHz

D. C. Dumka, W. E. Hoke, P. J. Lemonias, G. Cueva, I. Adesida

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

MBE-grown metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates are presented. A linearly-graded InAlGaAs buffer layer is employed for strain relaxation. A mobility of 9520cm2/Vs and a sheet density of 2.85 × 1012cm-2 are achieved at room temperature. Devices with gate lengths ranging from 0.18 to l.0μm have been fabricated. Large drain currents and extrinsic transconductances with values up to 900mA/mm and 1.1mS/mm, respectively, are reported. For a 0.18μm gate length device, a unity current gain cutoff frequency (fT) of 204GHz is obtained. To the authors' knowledge, this is the highest fT to date for a metamorphic HEMT on GaAs.

Original languageEnglish
Pages (from-to)1854-1856
Number of pages3
JournalElectronics Letters
Volume35
Issue number21
DOIs
Publication statusPublished - Oct 14 1999
Externally publishedYes

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High electron mobility transistors
Strain relaxation
Drain current
Cutoff frequency
Transconductance
Substrates
Buffer layers
Molecular beam epitaxy
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Metamorphic in0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200GHz. / Dumka, D. C.; Hoke, W. E.; Lemonias, P. J.; Cueva, G.; Adesida, I.

In: Electronics Letters, Vol. 35, No. 21, 14.10.1999, p. 1854-1856.

Research output: Contribution to journalArticle

Dumka, D. C. ; Hoke, W. E. ; Lemonias, P. J. ; Cueva, G. ; Adesida, I. / Metamorphic in0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200GHz. In: Electronics Letters. 1999 ; Vol. 35, No. 21. pp. 1854-1856.
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