Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz

D. C. Dumka; W. E. Hoke; P. J. Lemonias; G. Cueva; I. Adesida

Metamorphic In_0.52Al_0.48As/In_0.53Ga_0.47As HEMTs on GaAs substrate with f_T over 200 GHz

D. C. Dumka, W. E. Hoke, P. J. Lemonias, G. Cueva, I. Adesida

Nazarbayev University

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

The growth, fabrication, and characterization of metamorphic In_0.52Al_0.48As/In_0.53Ga_0.47As high electron mobility transistors (HEMTs) on GaAs substrates are reported. The layer structure is grown using molecular beam epitaxy (MBE). Devices with gate lengths ranging from 0.18 to 1.0 μm have been fabricated. Devices show large saturation current densities with values up to 900 mA/mm. The extrinsic transconductances ranging from 680 mS/mm for 1.0 μm device to over 1.0 S/mm for 0.18 μm device are obtained. Very high cut-off frequencies (f_T's) ranging from 32 GHz to 204 GHz are presented.

Original language	English
Pages (from-to)	783-786
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - Dec 1 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Cite this

@article{cfcc4999bfc14b31abd47a52f870bd09,

title = "Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz",

abstract = "The growth, fabrication, and characterization of metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) on GaAs substrates are reported. The layer structure is grown using molecular beam epitaxy (MBE). Devices with gate lengths ranging from 0.18 to 1.0 μm have been fabricated. Devices show large saturation current densities with values up to 900 mA/mm. The extrinsic transconductances ranging from 680 mS/mm for 1.0 μm device to over 1.0 S/mm for 0.18 μm device are obtained. Very high cut-off frequencies (fT's) ranging from 32 GHz to 204 GHz are presented.",

author = "Dumka, {D. C.} and Hoke, {W. E.} and Lemonias, {P. J.} and G. Cueva and I. Adesida",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "783--786",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz

AU - Dumka, D. C.

AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Cueva, G.

AU - Adesida, I.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The growth, fabrication, and characterization of metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) on GaAs substrates are reported. The layer structure is grown using molecular beam epitaxy (MBE). Devices with gate lengths ranging from 0.18 to 1.0 μm have been fabricated. Devices show large saturation current densities with values up to 900 mA/mm. The extrinsic transconductances ranging from 680 mS/mm for 1.0 μm device to over 1.0 S/mm for 0.18 μm device are obtained. Very high cut-off frequencies (fT's) ranging from 32 GHz to 204 GHz are presented.

AB - The growth, fabrication, and characterization of metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) on GaAs substrates are reported. The layer structure is grown using molecular beam epitaxy (MBE). Devices with gate lengths ranging from 0.18 to 1.0 μm have been fabricated. Devices show large saturation current densities with values up to 900 mA/mm. The extrinsic transconductances ranging from 680 mS/mm for 1.0 μm device to over 1.0 S/mm for 0.18 μm device are obtained. Very high cut-off frequencies (fT's) ranging from 32 GHz to 204 GHz are presented.

UR - http://www.scopus.com/inward/record.url?scp=0033314638&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033314638&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033314638

SP - 783

EP - 786

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -