Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz

D. C. Dumka, W. E. Hoke, P. J. Lemonias, G. Cueva, I. Adesida

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)

Abstract

The growth, fabrication, and characterization of metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) on GaAs substrates are reported. The layer structure is grown using molecular beam epitaxy (MBE). Devices with gate lengths ranging from 0.18 to 1.0 μm have been fabricated. Devices show large saturation current densities with values up to 900 mA/mm. The extrinsic transconductances ranging from 680 mS/mm for 1.0 μm device to over 1.0 S/mm for 0.18 μm device are obtained. Very high cut-off frequencies (fT's) ranging from 32 GHz to 204 GHz are presented.

Original languageEnglish
Pages (from-to)783-786
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: Dec 5 1999Dec 8 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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