Abstract
The growth, fabrication, and characterization of metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) on GaAs substrates are reported. The layer structure is grown using molecular beam epitaxy (MBE). Devices with gate lengths ranging from 0.18 to 1.0 μm have been fabricated. Devices show large saturation current densities with values up to 900 mA/mm. The extrinsic transconductances ranging from 680 mS/mm for 1.0 μm device to over 1.0 S/mm for 0.18 μm device are obtained. Very high cut-off frequencies (fT's) ranging from 32 GHz to 204 GHz are presented.
Original language | English |
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Pages (from-to) | 783-786 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
Publication status | Published - Dec 1 1999 |
Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry