Microwave electronics device applications of AlGaN/GaN heterostructures

Q. Chen, J. W. Yang, M. Blasingame, C. Faber, A. T. Ping, I. Adesida

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

One thrust in the recent AlGaN/GaN based HFET development hinges on the use of SiC substrates for the growth of the AlGaN/GaN heterostructures. We have achieved Gm and maximum drain current (Imax) as high as 222 mS mm-1 and 1.71 A mm-1 for HFETs grown on n-SiC. The HFETs on p-SiC have also shown Gm and Imax of 230 mS mm-1 and 1.43 A mm-1. These devices exhibited cut-off frequency (f1) and frequency of oscillation (fmax) of 55 and 56 GHz for HFETs on p-SiC, further demonstrating the applicability of AlGaN/GaN-based HFETs in high power microwave frequency range. The availability of high quality AlGaN/GaN heterostructure has also permitted the implementation of such new device concept as metal-insulator-semiconductor FETs (MISFETs). Our MISFETs have shown low gate leakage in ± 6 V gate bias range with Gm as high as 86 mS mm-1.

Original languageEnglish
Pages (from-to)395-400
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume59
Issue number1-3
DOIs
Publication statusPublished - May 6 1999
Externally publishedYes

Fingerprint

MIS (semiconductors)
Field effect transistors
Heterojunctions
Electronic equipment
field effect transistors
Microwaves
Semiconductor materials
microwaves
hinges
Drain current
Microwave frequencies
Cutoff frequency
Hinges
microwave frequencies
Metals
electronics
thrust
availability
leakage
cut-off

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Microwave electronics device applications of AlGaN/GaN heterostructures. / Chen, Q.; Yang, J. W.; Blasingame, M.; Faber, C.; Ping, A. T.; Adesida, I.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 59, No. 1-3, 06.05.1999, p. 395-400.

Research output: Contribution to journalArticle

Chen, Q. ; Yang, J. W. ; Blasingame, M. ; Faber, C. ; Ping, A. T. ; Adesida, I. / Microwave electronics device applications of AlGaN/GaN heterostructures. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 1999 ; Vol. 59, No. 1-3. pp. 395-400.
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