Microwave noise characteristics of AlGaN/GaN HEMTs on, SiC substrates for broad-band low-noise amplifiers

J. W. Lee, A. Kuliev, V. Kumar, R. Schwindt, I. Adesida

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

This letter reports high-performance passivated AlGaN/GaN high electron-mobility transistors (HEMTs) with 0.25-μm gate-length for low noise applications. The devices exhibited a minimum noise figure (NFmim) of 0.98 dB and an associated gain (Ga) of 8.97 dB at 18 GHz. The noise resistance (Rn), the measure of noise sensitivity to source mismatch, is 31 Ω at 18 GHz, which is relatively low and suitable for broad-band low noise amplifiers. The noise modeling analysis shows that the minimum noise figure of the GaN HEMT can be reduced further by reducing noise contributions from parasitics. These results demonstrate the viability of AlGaN/GaN HEMTs for low-noise as well as high power amplifiers.

Original languageEnglish
Pages (from-to)259-261
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume14
Issue number6
DOIs
Publication statusPublished - Jun 2004
Externally publishedYes

Fingerprint

Low noise amplifiers
High electron mobility transistors
high electron mobility transistors
low noise
amplifiers
Microwaves
Noise figure
broadband
microwaves
Substrates
Power amplifiers
power amplifiers
viability

Keywords

  • AlGaN
  • GaN
  • HEMTs
  • Microwave noise
  • Minimum noise figure

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Microwave noise characteristics of AlGaN/GaN HEMTs on, SiC substrates for broad-band low-noise amplifiers. / Lee, J. W.; Kuliev, A.; Kumar, V.; Schwindt, R.; Adesida, I.

In: IEEE Microwave and Wireless Components Letters, Vol. 14, No. 6, 06.2004, p. 259-261.

Research output: Contribution to journalArticle

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