Microwave noise performance of AlGaN/GaN HEMTs

A. T. Ping, E. Piner, J. Redwing, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

The authors have characterized the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating SiC substrates. The minimum noise figure for 0.25 μm gate-length devices was measured to be 0.77dB at 5 GHz and 1.06dB at 10 GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications.

Original languageEnglish
Pages (from-to)175-176
Number of pages2
JournalElectronics Letters
Volume36
Issue number2
DOIs
Publication statusPublished - Jan 20 2000

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Microwave noise performance of AlGaN/GaN HEMTs'. Together they form a unique fingerprint.

Cite this