Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates

J. W. Lee, V. Kumar, R. Schwindt, A. Kuliev, R. Birkhahn, D. Gotthold, S. Guo, B. Albert, I. Adesida

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

High-performance, low-noise AlGaN/GaN high electron mobility transistors (HEMTs) with 0.25 μm gate-length have been fabricated on semi-insulating 6H-SiC substrates. The devices exhibited a unity current gain cutoff frequency (fT) of 52.3 GHz, and maximum frequency of oscillation (f MAX) of 112 GHz. At 10 GHz, a minimum noise figure (NF min) of 0.75 dB and an associated gain (Ga) of 10.84 dB was obtained when biased at VDS=10 V and IDS= 40.6 mA/mm. The corresponding values were 1.15 and 7.49 dB at 18 GHz. These results are the first reported microwave noise characteristics obtained from 0.25 μm gate-length GaN HEMTs on 6H-SiC substrates. The use of 6H-SiC substrates provides an alternative solution to the full commercialisation of GaN-based technologies for low-noise and high-power electronics.

Original languageEnglish
Pages (from-to)80-81
Number of pages2
JournalElectronics Letters
Volume40
Issue number1
DOIs
Publication statusPublished - Jan 8 2004
Externally publishedYes

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Microwaves
High electron mobility transistors
Substrates
Noise figure
Cutoff frequency
Power electronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates. / Lee, J. W.; Kumar, V.; Schwindt, R.; Kuliev, A.; Birkhahn, R.; Gotthold, D.; Guo, S.; Albert, B.; Adesida, I.

In: Electronics Letters, Vol. 40, No. 1, 08.01.2004, p. 80-81.

Research output: Contribution to journalArticle

Lee, JW, Kumar, V, Schwindt, R, Kuliev, A, Birkhahn, R, Gotthold, D, Guo, S, Albert, B & Adesida, I 2004, 'Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates', Electronics Letters, vol. 40, no. 1, pp. 80-81. https://doi.org/10.1049/el:20040012
Lee JW, Kumar V, Schwindt R, Kuliev A, Birkhahn R, Gotthold D et al. Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates. Electronics Letters. 2004 Jan 8;40(1):80-81. https://doi.org/10.1049/el:20040012
Lee, J. W. ; Kumar, V. ; Schwindt, R. ; Kuliev, A. ; Birkhahn, R. ; Gotthold, D. ; Guo, S. ; Albert, B. ; Adesida, I. / Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates. In: Electronics Letters. 2004 ; Vol. 40, No. 1. pp. 80-81.
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AU - Kuliev, A.

AU - Birkhahn, R.

AU - Gotthold, D.

AU - Guo, S.

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