Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates

J. W. Lee, V. Kumar, R. Schwindt, A. Kuliev, R. Birkhahn, D. Gotthold, S. Guo, B. Albert, I. Adesida

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9 Citations (Scopus)


High-performance, low-noise AlGaN/GaN high electron mobility transistors (HEMTs) with 0.25 μm gate-length have been fabricated on semi-insulating 6H-SiC substrates. The devices exhibited a unity current gain cutoff frequency (fT) of 52.3 GHz, and maximum frequency of oscillation (f MAX) of 112 GHz. At 10 GHz, a minimum noise figure (NF min) of 0.75 dB and an associated gain (Ga) of 10.84 dB was obtained when biased at VDS=10 V and IDS= 40.6 mA/mm. The corresponding values were 1.15 and 7.49 dB at 18 GHz. These results are the first reported microwave noise characteristics obtained from 0.25 μm gate-length GaN HEMTs on 6H-SiC substrates. The use of 6H-SiC substrates provides an alternative solution to the full commercialisation of GaN-based technologies for low-noise and high-power electronics.

Original languageEnglish
Pages (from-to)80-81
Number of pages2
JournalElectronics Letters
Issue number1
Publication statusPublished - Jan 8 2004

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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