Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

Q. Chen, R. Gaska, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, L. F. Eastman

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Abstract

The authors report the DC and microwave performance of a 0.25μm gate doped channel Al0.41 Ga0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5GHz and a maximum frequency of oscillations of 80.4GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively.

Original languageEnglish
Pages (from-to)637-639
Number of pages3
JournalElectronics Letters
Volume33
Issue number7
DOIs
Publication statusPublished - Mar 27 1997

Keywords

  • Field effect transistors
  • Microwave transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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