Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

Q. Chen; R. Gaska; M. Asif Khan; M. S. Shur; A. Ping; I. Adesida; J. Burm; W. J. Schaff; L. F. Eastman

doi:10.1049/el:19970403

Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

Q. Chen, R. Gaska, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, L. F. Eastman

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

The authors report the DC and microwave performance of a 0.25μm gate doped channel Al_0.41 Ga_0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5GHz and a maximum frequency of oscillations of 80.4GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively.

Original language	English
Pages (from-to)	637-639
Number of pages	3
Journal	Electronics Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1049/el:19970403
Publication status	Published - Mar 27 1997

Keywords

Field effect transistors
Microwave transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19970403

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title = "Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures",

abstract = "The authors report the DC and microwave performance of a 0.25μm gate doped channel Al0.41 Ga0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5GHz and a maximum frequency of oscillations of 80.4GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively.",

keywords = "Field effect transistors, Microwave transistors",

author = "Q. Chen and R. Gaska and {Asif Khan}, M. and Shur, {M. S.} and A. Ping and I. Adesida and J. Burm and Schaff, {W. J.} and Eastman, {L. F.}",

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T1 - Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

AU - Chen, Q.

AU - Gaska, R.

AU - Asif Khan, M.

AU - Shur, M. S.

AU - Ping, A.

AU - Adesida, I.

AU - Burm, J.

AU - Schaff, W. J.

AU - Eastman, L. F.

PY - 1997/3/27

Y1 - 1997/3/27

N2 - The authors report the DC and microwave performance of a 0.25μm gate doped channel Al0.41 Ga0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5GHz and a maximum frequency of oscillations of 80.4GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively.

AB - The authors report the DC and microwave performance of a 0.25μm gate doped channel Al0.41 Ga0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5GHz and a maximum frequency of oscillations of 80.4GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively.

KW - Field effect transistors

KW - Microwave transistors

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Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

Abstract

Keywords

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