Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

Q. Chen, R. Gaska, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, L. F. Eastman

Research output: Contribution to journal › Article

45 Citations (Scopus)

Abstract

The authors report the DC and microwave performance of a 0.25μm gate doped channel Al0.41 Ga0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5GHz and a maximum frequency of oscillations of 80.4GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively.

Original languageEnglish
Pages (from-to)637-639
Number of pages3
JournalElectronics Letters
Volume33
Issue number7
Publication statusPublished - Mar 27 1997
Externally publishedYes

Fingerprint

High electron mobility transistors
Microwaves
Cutoff frequency
Fermi level
Conduction bands
Transistors
Temperature

Keywords

  • Field effect transistors
  • Microwave transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chen, Q., Gaska, R., Asif Khan, M., Shur, M. S., Ping, A., Adesida, I., ... Eastman, L. F. (1997). Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures. Electronics Letters, 33(7), 637-639.

Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures. / Chen, Q.; Gaska, R.; Asif Khan, M.; Shur, M. S.; Ping, A.; Adesida, I.; Burm, J.; Schaff, W. J.; Eastman, L. F.

In: Electronics Letters, Vol. 33, No. 7, 27.03.1997, p. 637-639.

Research output: Contribution to journal › Article

Chen, Q, Gaska, R, Asif Khan, M, Shur, MS, Ping, A, Adesida, I, Burm, J, Schaff, WJ & Eastman, LF 1997, 'Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures', Electronics Letters, vol. 33, no. 7, pp. 637-639.
Chen Q, Gaska R, Asif Khan M, Shur MS, Ping A, Adesida I et al. Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures. Electronics Letters. 1997 Mar 27;33(7):637-639.
Chen, Q. ; Gaska, R. ; Asif Khan, M. ; Shur, M. S. ; Ping, A. ; Adesida, I. ; Burm, J. ; Schaff, W. J. ; Eastman, L. F. / Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures. In: Electronics Letters. 1997 ; Vol. 33, No. 7. pp. 637-639.
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AU - Shur, M. S.

AU - Ping, A.

AU - Adesida, I.

AU - Burm, J.

AU - Schaff, W. J.

AU - Eastman, L. F.

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