Millimeter-wave 4:1 Transformer-based balun design for CMOS RF IC's

Liwen Jing, Alvin Li, Duona Luo, Corbett R. Rowell, C. Patrick Yue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a compact 4:1 ratio transformer-based balun design in 65-nm CMOS process. The insertion loss is lower than 1.5 dB from 56 GHz to 64 GHz. The balun also serves as a matching network between the output of mixer and chip output terminal. By choosing appropriate inductance ratio and mutual coupling coefficient, the impedance transforms from (52.9+j85.8) ω to (29.1+j4.7) ω. Cascade ABCD parameter de-embedding technique is applied to remove the connection parasitic effects in the testing structure.

Original languageEnglish
Title of host publication2015 IEEE International Wireless Symposium, IWS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479919284
DOIs
Publication statusPublished - Jul 22 2015
EventIEEE International Wireless Symposium, IWS 2015 - Shenzhen, China
Duration: Mar 30 2015Apr 1 2015

Publication series

Name2015 IEEE International Wireless Symposium, IWS 2015

Other

OtherIEEE International Wireless Symposium, IWS 2015
CountryChina
CityShenzhen
Period3/30/154/1/15

    Fingerprint

Keywords

  • CMOS
  • balun
  • impedance matching
  • millimeter wave devices

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Jing, L., Li, A., Luo, D., Rowell, C. R., & Yue, C. P. (2015). Millimeter-wave 4:1 Transformer-based balun design for CMOS RF IC's. In 2015 IEEE International Wireless Symposium, IWS 2015 [7164519] (2015 IEEE International Wireless Symposium, IWS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEEE-IWS.2015.7164519