Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates

Randal S. Schwindt, Vipan Kumar, Almaz Kuliev, G. Simin, J. W. Yang, M. Asif Khan, Margaret E. Muir, Ilesanmi Adesida

Research output: Contribution to journalLetter

7 Citations (Scopus)

Abstract

We report on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (fT) of 65 GHz, and maximum frequency of oscillation (fmax) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.

Original languageEnglish
Pages (from-to)93-95
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume13
Issue number3
DOIs
Publication statusPublished - Mar 2003
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
Millimeter waves
millimeter waves
power efficiency
Metallorganic chemical vapor deposition
Transconductance
Substrates
Current density
output
transconductance
metalorganic chemical vapor deposition
unity
cut-off
current density
oscillations

Keywords

  • GaN
  • High electron mobility transistors (HEMTs)
  • Microwave power
  • SiC

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates. / Schwindt, Randal S.; Kumar, Vipan; Kuliev, Almaz; Simin, G.; Yang, J. W.; Khan, M. Asif; Muir, Margaret E.; Adesida, Ilesanmi.

In: IEEE Microwave and Wireless Components Letters, Vol. 13, No. 3, 03.2003, p. 93-95.

Research output: Contribution to journalLetter

Schwindt, Randal S. ; Kumar, Vipan ; Kuliev, Almaz ; Simin, G. ; Yang, J. W. ; Khan, M. Asif ; Muir, Margaret E. ; Adesida, Ilesanmi. / Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates. In: IEEE Microwave and Wireless Components Letters. 2003 ; Vol. 13, No. 3. pp. 93-95.
@article{1dfb525f7ac445298199b0bfa58d1209,
title = "Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates",
abstract = "We report on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (fT) of 65 GHz, and maximum frequency of oscillation (fmax) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16{\%} power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20{\%} PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.",
keywords = "GaN, High electron mobility transistors (HEMTs), Microwave power, SiC",
author = "Schwindt, {Randal S.} and Vipan Kumar and Almaz Kuliev and G. Simin and Yang, {J. W.} and Khan, {M. Asif} and Muir, {Margaret E.} and Ilesanmi Adesida",
year = "2003",
month = "3",
doi = "10.1109/LMWC.2003.810115",
language = "English",
volume = "13",
pages = "93--95",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates

AU - Schwindt, Randal S.

AU - Kumar, Vipan

AU - Kuliev, Almaz

AU - Simin, G.

AU - Yang, J. W.

AU - Khan, M. Asif

AU - Muir, Margaret E.

AU - Adesida, Ilesanmi

PY - 2003/3

Y1 - 2003/3

N2 - We report on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (fT) of 65 GHz, and maximum frequency of oscillation (fmax) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.

AB - We report on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (fT) of 65 GHz, and maximum frequency of oscillation (fmax) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.

KW - GaN

KW - High electron mobility transistors (HEMTs)

KW - Microwave power

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=0038577082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038577082&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2003.810115

DO - 10.1109/LMWC.2003.810115

M3 - Letter

AN - SCOPUS:0038577082

VL - 13

SP - 93

EP - 95

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 3

ER -