Mo/Al/Mo/Au Ohmic contact scheme for Al xGa 1-xN/GaN high electron mobility transistors annealed at 500 °C

A. Basu, F. M. Mohammed, S. Guo, B. Peres, I. Adesida

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Low-resistance Ohmic contacts on Al0.3 Ga0.7 NGaN high electron mobility transistors (HEMTs) were formed with a MoAlMoAu metallization scheme which was annealed at a relatively low temperature of 500 °C. A contact resistance of 0.11±0.05 Σ mm and a specific contact resistivity of 2.63× 10-7 Σ cm2 were achieved. This represents the best low-temperature-annealed Ohmic contacts on GaN-based HEMTs achieved to date.

Original languageEnglish
Pages (from-to)L16-L18
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number2
DOIs
Publication statusPublished - Mar 1 2006

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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