Mo/Al/Mo/Au Ohmic contact scheme for Al xGa 1-xN/GaN high electron mobility transistors annealed at 500 °C

A. Basu, F. M. Mohammed, S. Guo, B. Peres, I. Adesida

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Low-resistance Ohmic contacts on Al0.3 Ga0.7 NGaN high electron mobility transistors (HEMTs) were formed with a MoAlMoAu metallization scheme which was annealed at a relatively low temperature of 500 °C. A contact resistance of 0.11±0.05 Σ mm and a specific contact resistivity of 2.63× 10-7 Σ cm2 were achieved. This represents the best low-temperature-annealed Ohmic contacts on GaN-based HEMTs achieved to date.

Original languageEnglish
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number2
DOIs
Publication statusPublished - Mar 2006
Externally publishedYes

Fingerprint

Ohmic contacts
High electron mobility transistors
high electron mobility transistors
electric contacts
Contact resistance
Metallizing
low resistance
contact resistance
Temperature
electrical resistivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Low-resistance Ohmic contacts on Al0.3 Ga0.7 NGaN high electron mobility transistors (HEMTs) were formed with a MoAlMoAu metallization scheme which was annealed at a relatively low temperature of 500 °C. A contact resistance of 0.11±0.05 Σ mm and a specific contact resistivity of 2.63× 10-7 Σ cm2 were achieved. This represents the best low-temperature-annealed Ohmic contacts on GaN-based HEMTs achieved to date.",
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T1 - Mo/Al/Mo/Au Ohmic contact scheme for Al xGa 1-xN/GaN high electron mobility transistors annealed at 500 °C

AU - Basu, A.

AU - Mohammed, F. M.

AU - Guo, S.

AU - Peres, B.

AU - Adesida, I.

PY - 2006/3

Y1 - 2006/3

N2 - Low-resistance Ohmic contacts on Al0.3 Ga0.7 NGaN high electron mobility transistors (HEMTs) were formed with a MoAlMoAu metallization scheme which was annealed at a relatively low temperature of 500 °C. A contact resistance of 0.11±0.05 Σ mm and a specific contact resistivity of 2.63× 10-7 Σ cm2 were achieved. This represents the best low-temperature-annealed Ohmic contacts on GaN-based HEMTs achieved to date.

AB - Low-resistance Ohmic contacts on Al0.3 Ga0.7 NGaN high electron mobility transistors (HEMTs) were formed with a MoAlMoAu metallization scheme which was annealed at a relatively low temperature of 500 °C. A contact resistance of 0.11±0.05 Σ mm and a specific contact resistivity of 2.63× 10-7 Σ cm2 were achieved. This represents the best low-temperature-annealed Ohmic contacts on GaN-based HEMTs achieved to date.

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