Modeling of InGaAs MSM photodetector for circuit-level simulation

Andrew Xiang, Walter Wohlmuth, Patrick Fay, Sung Mo Kang, Ilesanmi Adesida

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes.

Original languageEnglish
Pages (from-to)716-723
Number of pages8
JournalJournal of Lightwave Technology
Volume14
Issue number5
DOIs
Publication statusPublished - May 1996
Externally publishedYes

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Photodetectors
photometers
Semiconductor materials
Networks (circuits)
Metals
metals
simulation
entire functions
signal analysis
Signal analysis
Scattering parameters
SPICE
transit time
dark current
Impulse response
Convolution
convolution integrals
impulses

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Modeling of InGaAs MSM photodetector for circuit-level simulation. / Xiang, Andrew; Wohlmuth, Walter; Fay, Patrick; Kang, Sung Mo; Adesida, Ilesanmi.

In: Journal of Lightwave Technology, Vol. 14, No. 5, 05.1996, p. 716-723.

Research output: Contribution to journalArticle

Xiang, Andrew ; Wohlmuth, Walter ; Fay, Patrick ; Kang, Sung Mo ; Adesida, Ilesanmi. / Modeling of InGaAs MSM photodetector for circuit-level simulation. In: Journal of Lightwave Technology. 1996 ; Vol. 14, No. 5. pp. 716-723.
@article{6bf2d1b785a3424db943ff8369cebd05,
title = "Modeling of InGaAs MSM photodetector for circuit-level simulation",
abstract = "An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes.",
author = "Andrew Xiang and Walter Wohlmuth and Patrick Fay and Kang, {Sung Mo} and Ilesanmi Adesida",
year = "1996",
month = "5",
doi = "10.1109/50.495150",
language = "English",
volume = "14",
pages = "716--723",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Modeling of InGaAs MSM photodetector for circuit-level simulation

AU - Xiang, Andrew

AU - Wohlmuth, Walter

AU - Fay, Patrick

AU - Kang, Sung Mo

AU - Adesida, Ilesanmi

PY - 1996/5

Y1 - 1996/5

N2 - An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes.

AB - An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes.

UR - http://www.scopus.com/inward/record.url?scp=0030142592&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030142592&partnerID=8YFLogxK

U2 - 10.1109/50.495150

DO - 10.1109/50.495150

M3 - Article

AN - SCOPUS:0030142592

VL - 14

SP - 716

EP - 723

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

SN - 0733-8724

IS - 5

ER -