Modeling of the substrate topography upon nanosized profiling by focused ion beams

O. A. Ageev, A. M. Alekseev, A. V. Vnukova, A. L. Gromov, A. S. Kolomiytsev, B. G. Konoplev

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This paper presents the results of a mathematical model developed for calculating two-dimensional topography of the substrate surface when etching by a focused ion beam (FIB). A simulation of the two-dimensional relief of the substrate when irradiated by the FIB was carried out. An algorithm and software were developed making it possible to forecast the parameters of the surface relief depending on the characteristics of the ion beam and scanning system. The algorithm takes into account the redeposition of the sputtered material. The adequacy of the model is confirmed by a comparison with the results of experimental investigations.

Original languageEnglish
Pages (from-to)31-37
Number of pages7
JournalNanotechnologies in Russia
Volume9
Issue number1-2
DOIs
Publication statusPublished - Jan 2014

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Engineering(all)

Fingerprint Dive into the research topics of 'Modeling of the substrate topography upon nanosized profiling by focused ion beams'. Together they form a unique fingerprint.

  • Cite this