Modulation effects in multi-section semiconductor lasers

Nicholas G. Usechak, Matt Grupen, Nader Naderi, Yan Li, Luke F. Lester, Vassilios Kovanis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The current modulation of a two-section semiconductor laser is first reviewed analytically using a well-known, closed-form, modulation expression. A system of traveling-intensity equations is then used to investigate spatial effects in these lasers including cavity layout and the role played by cavity length. The numerical simulations verify the accuracy of the analytic expression for short cavities (low frequencies) but identify shortcomings as the cavity length (modulation frequency) is increased. One notable difference is the presence of resonant peaks in the modulation response. Although this effect has been addressed in the past, the arrangement of sections within the laser is shown to play a prominent role in these monolithic devices for what we believe to be the first time. In the course of this investigation the thirteen different ways a two-section semiconductor laser can be current modulated are identified and computationally investigated.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7933
DOIs
Publication statusPublished - 2011
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XIX - San Francisco, CA, United States
Duration: Jan 24 2011Jan 27 2011

Other

OtherPhysics and Simulation of Optoelectronic Devices XIX
CountryUnited States
CitySan Francisco, CA
Period1/24/111/27/11

Fingerprint

Semiconductor Lasers
Semiconductor lasers
Cavity
Modulation
semiconductor lasers
modulation
cavities
Laser resonators
Frequency modulation
Laser
laser cavities
layouts
frequency modulation
Frequency Modulation
low frequencies
Low Frequency
Layout
Arrangement
Closed-form
Lasers

Keywords

  • feedback-enhanced modulation
  • gain lever
  • laser modulation
  • Multi-section semiconductor lasers
  • resonant modulation
  • RF photonics

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Usechak, N. G., Grupen, M., Naderi, N., Li, Y., Lester, L. F., & Kovanis, V. (2011). Modulation effects in multi-section semiconductor lasers. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7933). [79331I] https://doi.org/10.1117/12.876513

Modulation effects in multi-section semiconductor lasers. / Usechak, Nicholas G.; Grupen, Matt; Naderi, Nader; Li, Yan; Lester, Luke F.; Kovanis, Vassilios.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7933 2011. 79331I.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Usechak, NG, Grupen, M, Naderi, N, Li, Y, Lester, LF & Kovanis, V 2011, Modulation effects in multi-section semiconductor lasers. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7933, 79331I, Physics and Simulation of Optoelectronic Devices XIX, San Francisco, CA, United States, 1/24/11. https://doi.org/10.1117/12.876513
Usechak NG, Grupen M, Naderi N, Li Y, Lester LF, Kovanis V. Modulation effects in multi-section semiconductor lasers. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7933. 2011. 79331I https://doi.org/10.1117/12.876513
Usechak, Nicholas G. ; Grupen, Matt ; Naderi, Nader ; Li, Yan ; Lester, Luke F. ; Kovanis, Vassilios. / Modulation effects in multi-section semiconductor lasers. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7933 2011.
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